Philips electron microscopes: Applications trends—design advances

Author(s):  
M.N. Thompson

Application trends in the 1990's will continue to be driven by the pursuit of materials characterisation to higher levels of structural and chemical resolution. Due to the information-limit and current-density limitations of LaB6 sources, further advancements will require better electron guns. The choice of guns includes Cold, Thermally-assisted Cold and Schottky Field Emitters. For SEM and STEM the Cold Field Emitter is a reasonable choice, because the primary criterion for small-probe techniques is current density. This logic doesn't apply to TEMs, which require both high current density for small probes and high total current for large-area illumination at various TEM magnification levels. Table 1 compares Schottky and Cold Field emitters in different applications and microscope construction. In view of its performance (Figs. 1 and 2), the Field Emission Gun is expected to have a major impact on TEM in the 1990's.

1988 ◽  
Vol 129 ◽  
Author(s):  
S.D. Berger ◽  
J.M. Macaulay ◽  
L.M. Brown ◽  
R.M. Allen

ABSTRACTHigh current density electron beam irradiation with a small probe can lead to the production of holes in a variety of inorganic materials. We review some of the experimental observations of the hole formation process and compare these to the predictions of a simple model.


2001 ◽  
Vol 48 (2) ◽  
pp. 349-352 ◽  
Author(s):  
D.T. Morisette ◽  
J.A. Cooper ◽  
M.R. Melloch ◽  
G.M. Dolny ◽  
P.M. Shenoy ◽  
...  

2019 ◽  
Vol 963 ◽  
pp. 562-566
Author(s):  
Yi Dan Tang ◽  
Sheng Xu Dong ◽  
Yun Bai ◽  
Cheng Yue Yang ◽  
Cheng Zhan Li ◽  
...  

Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (TMJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that TMJBS device has better reverse performance, such as the best reverse blocking capability and lowest reverse surface leakage current than the conventional JBS and TJBS device while maintaining good forward characteristics. Furthermore, The large area TMJBS Diodes with high current density show the better reverse characteristics than the small area one at an acceptable forward characteristics. The TMJBS structure can significantly reduce the influence of the Schottky interface and is more suitable for manufacturing high current density and large area devices.


Author(s):  
Harish M. Manohara ◽  
Michael J. Bronikowski ◽  
Michael Hoenk ◽  
Brian D. Hunt ◽  
Peter H. Siegel

Author(s):  
Xupo Liu ◽  
Xuyun GUO ◽  
Mingxing Gong ◽  
Tonghui Zhao ◽  
Jian Zhang ◽  
...  

Exploring cost-effective electrodes operating at high current density above 400 mA cm-2 is still challenging for the industrial application of water splitting. Herein, the corrosion layers of iron foams are...


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