Geometry-dependence of defects in PBLT serpentines
Poly-buffered LOCOS + trench-isolation is a technique being explored for device-isolation on semiconductor substrates. The method creates self-aligned shallow field-oxide elements with minimal encroachment into active regions. In an earlier study/dislocations were observed in PBLT structures, associated with a combination of high-dose [∼1E15 cm−2] phosphorus implants and PBLT isolation. The present study investigates the effect of implant- and isolation-geometries on the formation of extended-defects in PBLT structures. The effect of fabrication-related stresses in the structures is of interest because extended-defects, once formed, can electrically degrade devices.PBLT structures were fabricated using varied implant- and isolation- geometries. Selected regions of the structures were exposed to 1E15 cm−2 phosphorus implants. Transmission electron microscopy was then used to characterize these regions. Some of the structures investigated were (i) trench with no adjacent implant, (ii) trench with an adjacent trench, but no implant, (iii) trench with a 1E15 cm−2 phosphorus implant placed ∼4 μm from the trench, (iv) trench with a 1E15 cm−2 phosphorus implant placed ∼2 μm from the trench, (v) doubly-kinked trench with a 1E15cm−2 phosphorus implant placed between the kinks.