Growth of Si on Ge(001)2×l by gas-source molecular beam epitaxy

1993 ◽  
Vol 51 ◽  
pp. 806-807
Author(s):  
H.Z. Xiao ◽  
R. Tsu ◽  
I.M. Robertson ◽  
H.K. Birnbaum ◽  
J.E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
High Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Gas Source ◽  
High Quality Result ◽  
Strained Layer Superlattices

The growth of SiGe strained-layer superlattices (SLS) has been received considerable attention due to the electronic and optoelectronic properties of these layers. In addition, these structures offer tantalizing possibilities for "band gap engineering" through the use of strain and chemically ordered alloys. The remaining barriers to grow the SiGe SLS structures with high quality result from the generation of large densities of defects, such as dislocations, twins, stacking faults, etc., at the heterointerfaces arising from the misfit strain relaxation. Other problems associated with the growth of the SiGe SLS structures are segregation and low incorporation of the dopants and inter-diffusion of Si and Ge. In the present study, the inter-mixing of Si and Ge and the generation of the defects in Si epilayers grown on Ge(001)2×1 at 550 °C by gas-source molecular beam epitaxy (MBE) from Si2H6 were studied using transmission electron microscopy (TEM), in-situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and electron energy-loss spectroscopy (EELS).

Ge Segregation and Surface Roughening During Si Growth on Ge(001)2×l by Gas-Source Molecular Beam Epitaxy from Si2H6

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Tsu ◽  
D.-S. Lin ◽  
J. E. Greene ◽  
T.-C. Chiang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Energy ◽  
Single Step ◽  
Scanning Tunneling ◽  
Island Growth ◽  
Tunneling Microscopy ◽  
Compositional Evolution ◽  
Gas Source

ABSTRACTSurface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular-beam epitaxy (GSMBE) from Si2H6 has been investigated using in-situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy (AES), electron energy-loss spectroscopy (EELS), and scanning tunneling microscopy (STM). At 550 °C, single-step-height island growth was observed for nominal Si deposition thicknesses tsi up to ≃ 1.5 ML. The islands were essentially pure Ge which segregated to the surface as H was desorbed. At higher tsi, the Ge coverage decreased, the surface roughened, and two-dimensional multi-layer island growth was observed for tSi up to ≃8 ML above which three-dimensional island growth was obtained. For thick layers (t S: 75 ML), no Ge was detected at the surface.

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3810-3813 ◽  
Author(s):  
Reiko Kuroiwa ◽  
Hajime Asahi ◽  
Kakuya Iwata ◽  
Seong-Jin Kim ◽  
Joo-Hyong Noh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Gas Source ◽  
Rich Side

Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
A.Y. Lew ◽  
E.T. Yu ◽  
D.H. Chow ◽  
R.H. Miles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Close Inspection ◽  
Cross Sectional ◽  
Current Voltage ◽  
Strained Layer Superlattices

ABSTRACTCross-sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1-x InxSb strained-layer superlattices grown by molecular-beam epitaxy. Atomic-resolution constant-current images of the epitaxial layers reveal monolayer roughness at the superlattice interfaces. An asymmetry in electronic structure between interfaces in which InAs has been grown on Ga1-x InxSb and those in which Ga1-x InxSb has been grown on InAs has also been observed in these images. Close inspection of the images reveals increased growthdirection lattice spacings in the Ga1-x InxSb layers compared to the InAs layers, as well as even larger lattice spacings at the InAs/Ga1-x InxSb interfaces. The latter is consistent with the formation of primarily InSb-like interfaces. Current-voltage spectra obtained while tunneling into the superlattice layers are found to be strongly influenced by extended superlattice electronic states.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

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