Quantitative energy-filtered electron diffraction

1994 ◽  
Vol 52 ◽  
pp. 992-993
Author(s):  
R. Vincent
Keyword(s):  
Electron Diffraction ◽  
Inelastic Scattering ◽  
Dynamic Range ◽  
Electron Optics ◽  
Surface Layers ◽  
High Brightness ◽  
Inclined Surfaces ◽  
Perfect Symmetry ◽  
Amorphous Surface ◽  
The Ideal

Microanalysis and diffraction on a sub-nanometre scale have become practical in modern TEMs due to the high brightness of field emission sources combined with the short mean free paths associated with both elastic and inelastic scattering of incident electrons by the specimen. However, development of electron diffraction as a quantitative discipline has been limited by the absence of any generalised theory for dynamical inelastic scattering. These problems have been simplified by recent innovations, principally the introduction of spectrometers such as the Gatan imaging filter (GIF) and the Zeiss omega filter, which remove the inelastic electrons, combined with annual improvements in the speed of computer workstations and the availability of solid-state detectors with high resolution, sensitivity and dynamic range.Comparison of experimental data with dynamical calculations imposes stringent requirements on the specimen and the electron optics, even when the inelastic component has been removed. For example, no experimental CBED pattern ever has perfect symmetry, departures from the ideal being attributable to residual strain, thickness averaging, inclined surfaces, incomplete cells and amorphous surface layers.

Applications of Photoelectron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 506-507
Author(s):  
William J. Baxter
Keyword(s):  
Electron Microscopy ◽  
Thermal Decomposition ◽  
Chemical Composition ◽  
Ultraviolet Radiation ◽  
Thin Layer ◽  
Edge Effects ◽  
Electron Optics ◽  
Surface Layers ◽  
Crystalline Orientation ◽  
Fluorescent Screen

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.

Rocking Beam Microarea Diffraction Applied to Metallic thin Films

1976 ◽  
Vol 34 ◽  
pp. 396-397
Author(s):  
R. H. Geiss
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Small Area ◽  
Objective Lens ◽  
Electron Optics ◽  
Metallic Thin Films ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Sample Height ◽  
Scanning Transmission

The theory and practical limitations of micro area scanning transmission electron diffraction (MASTED) will be presented. It has been demonstrated that MASTED patterns of metallic thin films from areas as small as 30 Åin diameter may be obtained with the standard STEM unit available for the Philips 301 TEM. The key to the successful application of MASTED to very small area diffraction is the proper use of the electron optics of the STEM unit. First the objective lens current must be adjusted such that the image of the C2 aperture is quasi-stationary under the action of the rocking beam (obtained with 40-80-160 SEM settings of the P301). Second, the sample must be elevated to coincide with the C2 aperture image and its image also be quasi-stationary. This sample height adjustment must be entirely mechanical after the objective lens current has been fixed in the first step.

scholarly journals Ab initiostructure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

2016 ◽  
Vol 72 (2) ◽  
pp. 236-242 ◽  
Author(s):  
E. van Genderen ◽  
M. T. B. Clabbers ◽  
P. P. Das ◽  
A. Stewart ◽  
I. Nederlof ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Three Dimensional ◽  
Direct Methods ◽  
Liquid Nitrogen Temperature ◽  
High Dynamic Range ◽  
Electron Diffraction Data ◽  
High Signal

Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enablingab initiophasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e− Å−2 s−1) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS,SHELX) and for electron crystallography (ADT3D/PETS,SIR2014).

scholarly journals Quantitative High-Dynamic-Range Electron Diffraction of Polar Nanodomains in Pb2 ScTaO6

2018 ◽  
Vol 31 (5) ◽  
pp. 1806498 ◽  
Author(s):  
Jonathan J. P. Peters ◽  
Ana M. Sanchez ◽  
David Walker ◽  
Roger Whatmore ◽  
Richard Beanland
Keyword(s):  
Electron Diffraction ◽  
Dynamic Range ◽  
High Dynamic Range ◽  
High Dynamic

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Absorption Potential for Dynamic Electron Diffraction - A Revisit

1998 ◽  
Vol 4 (S2) ◽  
pp. 340-341
Author(s):  
Z.L. Wang ◽  
Chen Zhang
Keyword(s):  
Electron Diffraction ◽  
Inelastic Scattering ◽  
Structural Information ◽  
Dynamic Calculation ◽  
Model Calculations ◽  
Reflected Waves ◽  
Transmission Electron ◽  
Absorption Potential ◽  
Non Local ◽  
Almost All

Quantitative analysis of structural information provided by transmission electron diffraction and imaging strongly relies on computer simulations. An important quantity in dynamic calculation is the “absorption” potential. The absorption here actually means that the electron is not absorbed by the specimen rather it is scattered out of the elastic state (or Bragg peaks) due to energy-loss and momentum transfer, resulting in a decrease in the intensity of the elastic wave. This is the effect of inelastic scattering (or diffuse scattering) on the Bragg reflected waves [1]. Almost all of the model calculations for the absorption potential have been based on the approximation o riginally introduced by Y o sh ioka, in which the Green's function is approximated by its form in free-space. Thus, the absorption potential is simplified into a non-local function that depends only on the nature of the inelastic scattering.

Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation

2018 ◽  
Vol 184 ◽  
pp. 29-36 ◽  
Author(s):  
Tim Grieb ◽  
Moritz Tewes ◽  
Marco Schowalter ◽  
Knut Müller-Caspary ◽  
Florian F. Krause ◽  
...  
Keyword(s):  
Surface Layers ◽  
Amorphous Surface

Laser Quenching of Amorphous Si from the Melt Containing Dopants

1983 ◽  
Vol 23 ◽  
Author(s):  
S. U. Campisano ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
A. G. Cullis ◽  
N. G. Chew
Keyword(s):  
Laser Irradiation ◽  
Ruby Laser ◽  
Metal Layer ◽  
Amorphous Layer ◽  
Irradiation Condition ◽  
Uv Laser ◽  
Surface Layers ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Amorphous Surface

ABSTRACTThe formation of amorphous Si by the quench of a thin surface layer melted by fast UV laser irradiation has been investigated. The starting (111) surface layers were either pure or doped with As, Bi, In and Te by implantation. The asimplanted samples were recrystallized by ruby laser irradiation resulting in surface accumulation of Bi,In and Te. For the same UV irradiation condition, the amorphous layer formed in As, Bi, In or Te doped Si is about twice the thickness of the amorphous layer formed on pure Si. In the presence of the surface accumulation of Bi, In or Te, the amorphization results in an inward segregation of the dopant. For In, a very thin metal layer ˜15Å thick, is formed 150Å beneath the amorphous surface. These results show that the amorphous-liquid interfacial segregation coefficients for Bi, In or Te are less than unity and that the amorphous solidification proceeds from the surface and bottom of the liquid layer.

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