Microstructure and Electrical Properties of III-As Gate Stacks with Amorphous Rare-Earth High-k Oxides

S Oktyabrsky; R Kambhampati; V Tokranov; M Yakimov; T Heeg; M Warusawithana; DG Schlom; S Koveshnikov

doi:10.1017/s1431927610056990

Microstructure and Electrical Properties of III-As Gate Stacks with Amorphous Rare-Earth High-k Oxides

Microscopy and Microanalysis ◽

10.1017/s1431927610056990 ◽

2010 ◽

Vol 16 (S2) ◽

pp. 1412-1413

Author(s):

S Oktyabrsky ◽

R Kambhampati ◽

V Tokranov ◽

M Yakimov ◽

T Heeg ◽

...

Keyword(s):

Rare Earth ◽

Electrical Properties ◽

Gate Stacks ◽

High K

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Download Full-text

Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.11.016 ◽

2017 ◽

Vol 70 ◽

pp. 260-264 ◽

Cited By ~ 6

Author(s):

T. Kanashima ◽

R. Yamashiro ◽

M. Zenitaka ◽

K. Yamamoto ◽

D. Wang ◽

...

Keyword(s):

Electrical Properties ◽

Gate Stacks ◽

High K

Download Full-text

Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions

Electrochemical and Solid-State Letters ◽

10.1149/1.3086266 ◽

2009 ◽

Vol 12 (5) ◽

pp. G17 ◽

Cited By ~ 9

Author(s):

S. Van Elshocht ◽

C. Adelmann ◽

P. Lehnen ◽

S. De Gendt

Keyword(s):

Rare Earth ◽

Oxide Thickness ◽

Thickness Reduction ◽

Equivalent Oxide Thickness ◽

Gate Stacks ◽

High K

Download Full-text

Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.115 ◽

2013 ◽

Vol 109 ◽

pp. 137-141 ◽

Cited By ~ 9

Author(s):

Takuji Hosoi ◽

Iori Hideshima ◽

Ryohei Tanaka ◽

Yuya Minoura ◽

Akitaka Yoshigoe ◽

...

Keyword(s):

Electrical Properties ◽

State Change ◽

Gate Stacks ◽

Bonding State ◽

High K

Download Full-text

Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_12 ◽

2006 ◽

pp. 179-202

Author(s):

Gerald Lucovsky ◽

James C. Phillips

Keyword(s):

Rare Earth ◽

Transition Metal ◽

Gate Stacks ◽

Strain Relief ◽

Rare Earth Atom ◽

High K ◽

Dielectric Interfaces

Download Full-text

Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer

Applied Surface Science ◽

10.1016/j.apsusc.2017.09.016 ◽

2018 ◽

Vol 427 ◽

pp. 670-677 ◽

Cited By ~ 19

Author(s):

C.Venkata Prasad ◽

M.Siva Pratap Reddy ◽

V. Rajagopal Reddy ◽

Chinho Park

Keyword(s):

Rare Earth ◽

Electrical Properties ◽

Rare Earth Oxide ◽

High K ◽

Structural And Electrical Properties ◽

Gan Heterostructure

Download Full-text

Effect of Rare Earth Oxides on Electrical Properties of Spark Plasma Sintered AlN Ceramics

Journal of Inorganic Materials ◽

10.15541/jim20140428 ◽

2015 ◽

Vol 30 (3) ◽

pp. 267

Author(s):

HUANG Lin-Yun ◽

LI Chen-Hui ◽

KE Wen-Ming ◽

SHI Yu-Sheng ◽

HE Zhi-Yong ◽

...

Keyword(s):

Rare Earth ◽

Electrical Properties ◽

Rare Earth Oxides ◽

Spark Plasma

Download Full-text

Nanoscale Study of the Influence of Atomic Oxygen on the Electrical Properties of LaAlO3 Thin High-k Oxide Films Deposited by Molecular Beam Epitaxy

10.1557/proc-1252-i05-12 ◽

2009 ◽

Cited By ~ 2

Author(s):

Wael Hourani ◽

Liviu Militaru ◽

Brice Gautier ◽

David Albertini ◽

Armel Descamps-Mandine ◽

...

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Atomic Oxygen ◽

Molecular Beam ◽

Oxide Films ◽

High K

Download Full-text

Crystal phase, electrical properties, and solid oxide fuel cell electrolyte application of scandia-stabilized zirconia doped with rare earth elements

Open Ceramics ◽

10.1016/j.oceram.2021.100136 ◽

2021 ◽

pp. 100136

Author(s):

Susumu Nakayama ◽

Ryushiro Tokunaga ◽

Makoto Takata ◽

Shota Kondo ◽

Yasushi Nakajima

Keyword(s):

Rare Earth ◽

Fuel Cell ◽

Electrical Properties ◽

Rare Earth Elements ◽

Solid Oxide Fuel Cell ◽

Solid Oxide ◽

Crystal Phase ◽

Oxide Fuel ◽

Stabilized Zirconia

Download Full-text

Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

Download Full-text

Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories – Material and Electrical Properties

Journal of The Electrochemical Society ◽

10.1149/1.3596392 ◽

2011 ◽

Vol 158 (8) ◽

pp. H756 ◽

Cited By ~ 11

Author(s):

Chen-Han Lin ◽

Yue Kuo

Keyword(s):

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Nonvolatile Memories ◽

High K

Download Full-text