scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Plane Strain ◽  
Material Properties ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Direct Band ◽  
Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

scholarly journals Nickel doping effect on the structural and optical properties of indium sulfide thin films by SILAR

2018 ◽  
Vol 16 (1) ◽  
pp. 757-762 ◽  
Author(s):  
Fatma Göde ◽  
Serdar Ünlü
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Doping Concentration ◽  
Indium Sulfide ◽  
Ni Doping ◽  
X Ray ◽  
Direct Band Gap ◽  
Direct Band ◽  
Ni Dopant

AbstractUndoped and nickel doped indium sulfide (In2S3:Ni) thin films have been deposited on indium tin oxide (ITO) coated glass substrates by successive ionic layer adsorption and reaction (SILAR) method. The doping concentration of Ni has been adjusted as 4%, 5% and 6% (in molar ratio of nickel ions to indium ions). The effects of Ni doping on the structural, morphological, compositional and optical properties of the In2S3 thin films are investigated. The x-ray diffraction patterns show that deposited film has cubic structure with amorphous nature of In2S3 and its crystallinity deteriorates with increasing doping concentration. The SEM measurements show that the surface morphology of the films is affected from the Ni incorporation. The direct band gap of the films decreases from 2.33 eV to 1.61 eV with increasing Ni dopant. Energy dispersive x-ray spectroscopy (EDS) has been used to evaluate the chemical composition and shown that S/(Ni+In) ratio in films decreases from 1.18 to 0.40 with Ni content. Optical properties of the films have been performed by a UV-Vis spectrophotometer. The direct band gap of the films decreases from 2.33 eV to 1.61 eV with increasing Ni dopant. Moreover, optical parameters of the films such as refractive index (𝑛), extinction coefficient (k), real (ε1) and imaginary (ε2) parts of dielectric constant have been determined by using absorbance and transmittance spectra. The investigations showed that the Ni doping has a significant effect on the physical properties of SILAR produced In2S3 thin films.

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

Optoelectronic Analysis of CdGa2X4 (X= S, Se): A Promising Material for Solar Cells

2017 ◽  
Vol 900 ◽  
pp. 69-73 ◽  
Author(s):  
Pancham Kumar ◽  
Jagrati Sahariya ◽  
Amit Soni ◽  
K.C. Bhamu
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Density Of States ◽  
Density Functional ◽  
Visible Spectrum ◽  
Full Potential ◽  
Functional Theory ◽  
Augmented Plane Wave ◽  
Direct Band Gap ◽  
Direct Band

In this paper, the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

2017 ◽  
Vol 56 (3) ◽  
pp. 032102 ◽  
Author(s):  
Kazuki Tani ◽  
Shin-ichi Saito ◽  
Katsuya Oda ◽  
Makoto Miura ◽  
Yuki Wakayama ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

2016 ◽  
Vol 253 (5) ◽  
pp. 889-894 ◽  
Author(s):  
N. Belmiloud ◽  
F. Boutaiba ◽  
A. Belabbes ◽  
M. Ferhat ◽  
F. Bechstedt
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
First Principles ◽  
Heusler Compounds ◽  
Solar Cell Application ◽  
Direct Band Gap ◽  
First Principles Study ◽  
Direct Band ◽  
Lattice Matched

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

2016 ◽  
Vol 27 (43) ◽  
pp. 435204 ◽  
Author(s):  
Ajit K Katiyar ◽  
Andreas Grimm ◽  
R Bar ◽  
Jan Schmidt ◽  
Tobias Wietler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Emission Characteristics ◽  
Direct Band Gap ◽  
Direct Band

Analysis of thin-film direct band-gap SiGeSn alloy based heterostructure solar cell featuring SiGe absorber layer

Optik ◽  
2020 ◽  
Vol 202 ◽  
pp. 163715 ◽  
Author(s):  
Md Sadullah ◽  
Jaspinder Kaur ◽  
Rikmantra Basu ◽  
Ajay K. Sharma
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Band Gap ◽  
Absorber Layer ◽  
Direct Band Gap ◽  
Direct Band

Lead-free perovskite ferroelectric thin films with narrow direct band gap suitable for solar cell applications

2017 ◽  
Vol 95 ◽  
pp. 56-60 ◽  
Author(s):  
Qingfeng Zhang ◽  
Fang Xu ◽  
Maji Xu ◽  
Lei Li ◽  
Yinmei Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Ferroelectric Thin Films ◽  
Lead Free ◽  
Direct Band Gap ◽  
Direct Band
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