Direct observation of the perpendicular shape anisotropy and thermal stability of STT-MRAM nano-pillars examined by off-axis electron holography

In Ba ferrite particles magnetocrystalline and shape anisotropies are contemporarily present and conflicting. The strength and evolution of the two anisotropies are studied, through the dependence of the anisotropy constants on temperature. While in pure Ba ferrite particles the anisotropy is uniaxial at all temperatures, since the magnetocrystalline anisotropy clearly prevails on shape anisotropy, in particles modified for employment in recording media the two anisotropies are comparable and at low temperatures the shape anisotropy result stronger than the crystalline anisotropy. Besides the irregular shape of the particles introduces further preferred directions for the magnetization. The Co/Ti-doped particles show a multiple axes anisotropy. The macroscopic magnetic properties are found in relationship with the evolution of the anisotropy. Also the influence that the presence of such multiple anisotropy has on the magnetization switching and on the thermal stability of the magnetization of the Ba ferrite particles is analyzed.

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Effect of phospholipids and detergents on transitions and equilibrium between the bleaching intermediates of rhodopsin

Canadian Journal of Biochemistry and Cell Biology ◽

10.1139/o85-143 ◽

1985 ◽

Vol 63 (11) ◽

pp. 1152-1159 ◽

Cited By ~ 6

Author(s):

Hiroaki Motoyama ◽

Toshiaki Hamanaka ◽

Nobuyoka Kawase ◽

François Boucher ◽

Yuji Kitô

Keyword(s):

Thermal Stability ◽

Cholic Acid ◽

Direct Observation ◽

Back Reaction ◽

Transition Temperatures ◽

Sucrose Esters ◽

Thermal Stability Of ◽

Complex Manner

The thermal stability of bleaching intermediates and the metarhodopsins [Formula: see text] equilibrium have been examined for purified rhodopsin in cholic acid and a series of alkyl sucrose esters. The results are compared with rhodopsin contained in its natural phospholipid environment. It is found that detergents modify the transition temperatures of the photointermediates in a complex manner. The equilibrium between metarhodopsins I and II is also strongly dependent on the detergent species. It is shifted according to the micellar rigidity. This effect is reversible and allows direct observation of a back reaction from metarhodopsin II to I.

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Direct observation of thermal stability of M23C6carbides during reheating usingin situsynchrotron X-ray diffraction

Philosophical Magazine Letters ◽

10.1080/09500839.2012.728296 ◽

2013 ◽

Vol 93 (1) ◽

pp. 9-17 ◽

Cited By ~ 4

Author(s):

X.F. Zhang ◽

Y. Komizo

Keyword(s):

Thermal Stability ◽

Direct Observation ◽

X Ray Diffraction ◽

X Ray ◽

Thermal Stability Of

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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