scholarly journals Toward interpretable, wide field-of-view transmission electron microscopy techniques for imaging light atoms

2021 ◽  
Vol 27 (S1) ◽  
pp. 3058-3060
Author(s):  
Hamish Brown ◽  
Jim Ciston
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Field Of View ◽  
Wide Field ◽  
Transmission Electron ◽  
Wide Field Of View ◽  
Light Atoms ◽  
Microscopy Techniques

Stress Relaxation Behavior of GH4169 Alloy

2020 ◽  
Vol 1013 ◽  
pp. 52-58
Author(s):  
Xu Dong Lu ◽  
Song Yi Shi ◽  
Bo Wen ◽  
Ya Wei Zhang ◽  
Jin Hui Du
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stress Relaxation ◽  
Initial Stress ◽  
Relaxation Behavior ◽  
Stress Relaxation Behavior ◽  
Transmission Electron ◽  
Microscopy Techniques ◽  
The Relationship ◽  
Gh4169 Alloy

The relaxation properties of GH4169 alloy were studied contrastively at temperatures ranging from 600 oC to 700 °C and initial stress ranging from 550 MPa to 850 MPa. The relationship between the microstructure and relaxation behavior was evaluated using transmission electron microscopy techniques. It was found that the relaxation limit and relaxation stability of the alloy decreased obviously with the increase of temperature. Further investigations show that the relaxation behavior is mainly depend on both precipitate characteristics and its interaction with dislocations. The alloy with higher strength lever has more excellent stress relaxation stability, because of the inhibition of a large number subgrains on dislocations motion.

The Starting Members of the Series Pr4n+2(C2)nBr5n+5 (n = 1, 2, 3)

2009 ◽  
Vol 64 (8) ◽  
pp. 922-928 ◽  
Author(s):  
Manuel Christian Schaloske ◽  
Hansjürgen Mattausch ◽  
Viola Duppel ◽  
Lorenz Kienle ◽  
Arndt Simon
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystals ◽  
Lattice Parameters ◽  
Space Group ◽  
X Ray ◽  
Transmission Electron ◽  
General Series ◽  
Microscopy Techniques

The compounds Pr6(C2)Br10, Pr10(C2)2Br15 and Pr14(C2)3Br20 were prepared from PrBr3 and the appropriate amounts of Pr and C and characterized by X-ray structure analyses of single crystals. All three compounds crystallize in space group P1 with lattice parameters a = 7.571(2), b = 9.004(2), c = 9.062(2) Å ,α = 108.57(3), β = 97.77(3), γ = 106.28(3)◦ for Pr6(C2)Br10; a = 9.098(2), b = 10.127(2), c = 10.965(2) A° , α = 70.38(3), β = 66.31(3), γ = 70.84(3)◦ for Pr10(C2)2Br15; a = 9.054(2), b = 10.935(2), c = 13.352(3) Å , α = 86.27(3), β = 72.57(3), γ = 66.88(3)◦ for Pr14(C2)3Br20. They are members of a general series Ln4n+2(C2)nBr5n+5 and isostructural with the corresponding iodides known for Ln = La, Ce, Pr. Pr6(C2)Br10 was further characterized via transmission electron microscopy techniques

The Creation and Annealing of Heavy Ion Damage in Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
L. M. Howe ◽  
M. H. Rainville
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Distribution ◽  
High Resolution ◽  
Heavy Ion ◽  
High Energy ◽  
Transmission Electron ◽  
Ion Damage ◽  
Deposited Energy ◽  
Microscopy Techniques

ABSTRACTHigh resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

Role of Electron Microscopy in Semiconductor Electronic Defects Analysis

1985 ◽  
Vol 46 ◽  
Author(s):  
P. M. Petroff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Semiconductor Electronic ◽  
Scanning Transmission ◽  
Electronic Defect ◽  
Defects Analysis ◽  
Microscopy Techniques ◽  
Electronic Defects

AbstractA review of the Transmission Electron Microscopy and Scanning Transmission Electron Microscopy techniques used for electronic defect identification is presented. The structural, chemical and STEM based spectroscopy methods for electronic defect analysis are discussed along with selected examples.

scholarly journals Elastic distortion determining conduction in BiFeO3 phase boundaries

RSC Advances ◽  
2020 ◽  
Vol 10 (47) ◽  
pp. 27954-27960
Author(s):  
Kristina M. Holsgrove ◽  
Martial Duchamp ◽  
M. Sergio Moreno ◽  
Nicolas Bernier ◽  
Aaron B. Naden ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Mixed Phase ◽  
Phase Boundaries ◽  
Conducting Phase ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elastic Distortion ◽  
Microscopy Techniques

The localized crystallography of conducting and non-conducting phase boundaries in mixed-phase BiFeO3 is directly compared using scanning transmission electron microscopy techniques.

An improved and simplified protocol to combine Golgi-Cox staining with immunofluorescence and transmission electron microscopy techniques

2021 ◽  
Vol 142 ◽  
pp. 104922
Author(s):  
Matteo Pedrazzoli ◽  
Manuela Medelin ◽  
Federica Marchiotto ◽  
Barbara Cisterna ◽  
Manuela Malatesta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Microscopy Techniques

scholarly journals Probing planar defects in nanoparticle superlattices by 3D small-angle electron diffraction tomography and real space imaging

Nanoscale ◽  
2014 ◽  
Vol 6 (22) ◽  
pp. 13803-13808 ◽  
Author(s):  
Arnaud Mayence ◽  
Dong Wang ◽  
German Salazar-Alvarez ◽  
Peter Oleynikov ◽  
Lennart Bergström
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Real Space ◽  
Diffraction Tomography ◽  
Planar Defects ◽  
Pd Nanoparticle ◽  
Transmission Electron ◽  
Nanoparticle Superlattices ◽  
Microscopy Techniques

Planar defects in Pd nanoparticle superlattices were revealed by a combination of real and reciprocal space transmission electron microscopy techniques. 3D electron diffraction tomography was extended to characterize mesoscale imperfections.

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