Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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Depth profiles, projected ranges, and secondary ion mass spectrometry relative sensitivity factors for more than 50 elements from hydrogen to uranium implanted into metals

Surface and Coatings Technology ◽

10.1016/0257-8972(92)90264-b ◽

1992 ◽

Vol 51 (1-3) ◽

pp. 358-363 ◽

Cited By ~ 15

Author(s):

R.G. Wilson ◽

F.A. Stevie ◽

G.E. Lux ◽

C.L. Kirschbaum ◽

S. Frank ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Relative Sensitivity ◽

Depth Profiles ◽

Ion Mass Spectrometry ◽

Sensitivity Factors ◽

Secondary Ion

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Deconvolution analyses of secondary ion mass spectrometry shallow depth profiles with depth resolution functions from silicon substrate-based delta-doped samples

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3155826 ◽

2009 ◽

Vol 27 (4) ◽

pp. 1844 ◽

Cited By ~ 4

Author(s):

Mitsuhiro Tomita ◽

Hiroki Tanaka ◽

Mitsuo Koike ◽

Shiro Takeno ◽

Yutaro Hori ◽

...

Keyword(s):

Mass Spectrometry ◽

Silicon Substrate ◽

Secondary Ion Mass Spectrometry ◽

Depth Resolution ◽

Shallow Depth ◽

Depth Profiles ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Depth profiles of aluminum component in sequential infiltration synthesis-treated electron beam resist films analyzed by time-of-flight secondary ion mass spectrometry

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab8a0a ◽

2020 ◽

Vol 59 (SI) ◽

pp. SIIC03

Author(s):

Shunya Ito ◽

Yuki Ozaki ◽

Takahiro Nakamura ◽

Masaru Nakagawa

Keyword(s):

Mass Spectrometry ◽

Electron Beam ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiles ◽

Ion Mass Spectrometry ◽

Aluminum Component ◽

Secondary Ion

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Characterization of the noise in secondary ion mass spectrometry depth profiles

Journal of Applied Physics ◽

10.1063/1.363722 ◽

1996 ◽

Vol 80 (12) ◽

pp. 7104-7107 ◽

Cited By ~ 5

Author(s):

D. P. Chu ◽

M. G. Dowsett ◽

G. A. Cooke

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiles ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Analysis of Implanted Boron Profiles Across the Si-SiO2 Interface by Secondary Ion Mass Spectrometry.

MRS Proceedings ◽

10.1557/proc-25-649 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

V. R. Deline ◽

N. M. Johnson ◽

L. A. Christel

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Model Calculations ◽

Depth Profiles ◽

Ion Mass Spectrometry ◽

Profile Reconstruction ◽

Secondary Ion

ABSTRACTDepth profiles of boron implanted across the SiO2-Si interface have been measured by secondary ion mass spectrometry and compared with model calculations of the impurity distributions. Analysis of the sputtering and ion yield processes near the interface are used to reconstruct the measured boron profile for comparison with the model calculations. Applicability of the method of profile reconstruction near the interface to other materials and impurities is discussed.

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