Producing Highly Charged Ions without Solvent Using Laserspray Ionization: A Total Solvent-Free Analysis Approach at Atmospheric Pressure

2011 ◽  
Vol 83 (11) ◽  
pp. 4076-4084 ◽  
Author(s):  
Beixi Wang ◽  
Christopher B. Lietz ◽  
Ellen D. Inutan ◽  
Samantha M. Leach ◽  
Sarah Trimpin
Keyword(s):  
Atmospheric Pressure ◽  
Highly Charged Ions ◽  
Solvent Free ◽  
Analysis Approach ◽  
Laserspray Ionization ◽  
Charged Ions

Extending the Laserspray Ionization Concept to Produce Highly Charged Ions at High Vacuum on a Time-of-Flight Mass Analyzer

2011 ◽  
Vol 83 (14) ◽  
pp. 5469-5475 ◽  
Author(s):  
Sarah Trimpin ◽  
Yue Ren ◽  
Beixi Wang ◽  
Christopher B. Lietz ◽  
Alicia L. Richards ◽  
...  
Keyword(s):  
High Vacuum ◽  
Time Of Flight ◽  
Highly Charged Ions ◽  
Mass Analyzer ◽  
Laserspray Ionization ◽  
Charged Ions

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

Negative hydrogen ions and evidence for a potential dip in an electron cyclotron resonance discharge for highly charged ions

1998 ◽  
Vol 69 (2) ◽  
pp. 1197-1199 ◽  
Author(s):  
D. Bolshukhin ◽  
D. Meyer ◽  
U. Wolters ◽  
K. Wiesemann
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Highly Charged Ions ◽  
Electron Cyclotron ◽  
Hydrogen Ions ◽  
Charged Ions

scholarly journals Rapid relativistic distorted-wave approach for calculating cross sections for ionization of highly charged ions

1990 ◽  
Vol 42 (9) ◽  
pp. 5378-5383 ◽  
Author(s):  
Hong Lin Zhang ◽  
Douglas H. Sampson
Keyword(s):  
Cross Sections ◽  
Highly Charged Ions ◽  
Distorted Wave ◽  
Wave Approach ◽  
Charged Ions

Ground-state excitation of heavy highly-charged ions

2015 ◽  
Vol 48 (14) ◽  
pp. 144006 ◽  
Author(s):  
A Gumberidze ◽  
D B Thorn ◽  
C J Fontes ◽  
B Najjari ◽  
H L Zhang ◽  
...  
Keyword(s):  
Ground State ◽  
Highly Charged Ions ◽  
Charged Ions

A compact electron beam ion source with integrated Wien filter providing mass and charge state separated beams of highly charged ions

2009 ◽  
Vol 80 (6) ◽  
pp. 063301 ◽  
Author(s):  
M. Schmidt ◽  
H. Peng ◽  
G. Zschornack ◽  
S. Sykora
Keyword(s):  
Electron Beam ◽  
Charge State ◽  
Ion Source ◽  
Highly Charged Ions ◽  
Wien Filter ◽  
Charged Ions
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