Hydrogen implantation-induced large area exfoliation in AlN epitaxial layers

2009 ◽  
Vol 207 (1) ◽  
pp. 29-32 ◽  
Author(s):  
U. Dadwal ◽  
R. Scholz ◽  
P. Kumar ◽  
D. Kanjilal ◽  
S. Christiansen ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Large Area ◽  
Hydrogen Implantation

Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs

2006 ◽  
Vol 527-529 ◽  
pp. 135-140 ◽  
Author(s):  
Bernd Thomas ◽  
Christian Hecht ◽  
René A. Stein ◽  
Peter Friedrichs
Keyword(s):  
System Stability ◽  
Market Development ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
Large Area ◽  
Homoepitaxial Growth ◽  
The Past ◽  
Active Layers ◽  
Wafer Size ◽  
Drift Of Parameters

The rapid market development for SiC-devices during the last years can be attributed particularly to the success in supplying high-quality SiC wafers and corresponding epitaxial layers. The device quality could be enhanced and the costs were reduced by enlarging the wafer size as well as by a significant progress in epitaxial growth of active layers by using multi-wafer CVD systems. In this paper we want to give an overview of CVD multi-wafer systems used for SiC growth in the past and today. We present recent results of SiC homoepitaxial growth using our multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5×3” wafers per run and can be upgraded to a 7×3” or 5×4” setup. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity of doping and thickness have been grown. Issues like reproducibility, drift of parameters and system stability over several runs will be discussed.

SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

2006 ◽  
Vol 527-529 ◽  
pp. 159-162 ◽  
Author(s):  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
Michael J. Paisley ◽  
Adrian R. Powell ◽  
M.F. Brady ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Epitaxial Layer ◽  
High Throughput ◽  
Layer Growth ◽  
Experimental Results ◽  
Epitaxial Layers ◽  
Large Area ◽  
Low Background ◽  
Total Range ◽  
Background Doping

Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1x1014 cm-3 and intentional p- and n-type doping from ~1x1015 cm-3 to >1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity (σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The total range of the average intrawafer thickness and doping within a run are approximately ±1% and ±6% respectively.

Development of High Efficiency Thin Film Polycrystalline Silicon Solar Cells using Vest Process

1997 ◽  
Vol 485 ◽  
Author(s):  
T. Ishihara ◽  
S. Arimoto ◽  
H. Morikawa ◽  
Y. Nishimoto ◽  
Y. Kawama ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Front Surface ◽  
Zone Melting ◽  
Back Surface ◽  
Large Area ◽  
Hydrogen Implantation ◽  
Si Films

AbstractThin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films(VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1)quality of Si films, (2)back surface emitter (BSE), (3)front surface emitter etch-back process, (4)back surface field (BSF) layer thickness and its resistivity, and (5)defect passivation by hydrogen implantation. As a result of experiments, we have achieved 16% efficiency(Voc:0.589V, Jsc:35.6mA/cm2, F.E:0.763) with a cell size of 95.8cm2 and the thickness of 77μm. It is the highest efficiency ever reported for large area thin film Si solar cells.

Passivation of interface-states in large-area Si devices using hydrogen implantation

2003 ◽  
Vol 24 (7) ◽  
pp. 448-450 ◽  
Author(s):  
A. Kamgar ◽  
D.P. Monroe ◽  
W.M. Mansfield
Keyword(s):  
Interface States ◽  
Large Area ◽  
Hydrogen Implantation

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Rendakova ◽  
N. Kuznetsov ◽  
N. Savkina ◽  
M. Rastegaeva ◽  
A. Andreev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Small Area ◽  
Defect Density ◽  
Schottky Barriers ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Vacuum Sublimation ◽  
Sublimation Method

ABSTRACTThe characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV

2009 ◽  
Vol 615-617 ◽  
pp. 77-80 ◽  
Author(s):  
Bernd Thomas ◽  
Christian Hecht ◽  
Birgit Kallinger
Keyword(s):  
Layer Thickness ◽  
Surface Quality ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Homoepitaxial Growth ◽  
Different Types ◽  
First Time

In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the first time we show results of a low-doped full-loaded 73” run on 4° off-oriented substrates with a layer thickness of more than 70 µm. The target doping concentration of 1.2×1015 cm-3 is suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching.

scholarly journals LPE Application Technique for Obtaining of Thin Film Semiconductor Compounds

Proceedings ◽  
2018 ◽  
Vol 2 (14) ◽  
pp. 1116
Author(s):  
Vadym Tsybulenko ◽  
Stanislav Shutov ◽  
Sergey Yerochin
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
New Technique ◽  
Epitaxial Layers ◽  
Large Area ◽  
Semiconductor Compounds ◽  
A New Technique ◽  
Equipment Size ◽  
Short Time

A new technique of liquid phase epitaxy has been proposed in this work. It allows to eliminate known disadvantages of liquid phase epitaxy by creating short-time contact between a substrate and a solution-melt, as well as due to segmental deposition of an epitaxial layer over the working substrate surface. The short-time of the contact is achieved by the means of Ampere force acting on the solution-melt. And the contact itself between the substrate and the solution-melt is realized pointwise (or segmentally) over the substrate surface using the scanning principle. The new technique was named “scanning liquid phase epitaxy”. One of the modifications of device realization of the technique proposed has been considered and its principle of operation has been described. Preliminary theoretical investigations and experimental processes of semiconductor epitaxial layers obtaining have proved principal operational capability of the new technique. The technique developed allows to obtain thin and ultrathin epitaxial layers on the substrates of very large area which is limited only by the growth equipment size.

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Michael O'Loughlin ◽  
K. G. Irvine ◽  
J. J. Sumakeris ◽  
M. H. Armentrout ◽  
B. A. Hull ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Process Optimization ◽  
High Voltage ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Device Processing ◽  
Defect Densities ◽  
Hot Wall Epitaxy

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin Film Layer Transfer Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Rajendra Singh ◽  
R. Scholz ◽  
S. H. Christiansen ◽  
U. Goesele
Keyword(s):  
Thin Film ◽  
High Dose ◽  
Layer Transfer ◽  
Large Area ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Thin Film Layer ◽  
Hydrogen Implantation ◽  
Film Layer ◽  
Post Implantation

ABSTRACTHigh dose hydrogen implantation-induced blistering phenomena in GaN and AlN have been investigated for potential thin film layer transfer applications. GaN and AlN were implanted with 100 keV H2+ ions with various ion doses in the range of 5´1016 to 2.5´1017 cm−2. After implantation the samples were annealed at higher temperatures up to 800°C in order to observe the formation of surface blisters. In the case of GaN only those samples that were implanted with a dose of 1.3´1017 cm−2 or higher showed surface blistering after post-implantation annealing. For AlN the samples those were implanted with a dose of 1.0´1017 or 1.5´1017 cm−2 displayed surface blistering after post-implantation annealing. Cross-sectional transmission electron microscopy was utilized to observe the microscopic defects that eventually cause surface blistering. Large area microcracks, as revealed in the XTEM images, were clearly observed in the case of both GaN and AlN after post-implantation annealing. A comparison of the hydrogen implantation-induced blistering in GaN and AlN has also been presented.

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