scholarly journals Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Deposition

2021 ◽  
Author(s):  
Shashank Mishra ◽  
Erwann Jeanneau ◽  
Liang Tian ◽  
Ioana Nuta ◽  
Elisabeth Blanquet ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Alkoxide Precursors

Preparation of Epitaxial LiNbO3 Thin Film by MOCVD and its Properties

2008 ◽  
Vol 388 ◽  
pp. 179-182 ◽  
Author(s):  
Rintarou Morohashi ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Layer-by-layer growth of ε-Ga2O3 thin film by metal–organic chemical vapor deposition

2018 ◽  
Vol 11 (10) ◽  
pp. 101101 ◽  
Author(s):  
Zimin Chen ◽  
Zeqi Li ◽  
Yi Zhuo ◽  
Weiqu Chen ◽  
Xuejin Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Organic Chemical ◽  
Layer By Layer ◽  
Ga2o3 Thin Film ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition

2019 ◽  
Vol 88 (1) ◽  
pp. 10301
Author(s):  
Lei Qiang ◽  
Yanli Pei ◽  
Ruohe Yao
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Hall Mobility ◽  
Vapor Deposition ◽  
Variable Temperature ◽  
Calculated Data ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 1019cm−3, Hall mobility is chiefly confined to scattering by ionized impurities.

Growth of β-FeSi2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 2, No. 5A) ◽  
pp. L460-L462 ◽  
Author(s):  
Kensuke Akiyama ◽  
Seishiro Ohya ◽  
Hiromichi Takano ◽  
Nobuo Kieda ◽  
Hiroshi Funakubo
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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