Engineering Fractal MTW Zeolite Mesocrystal: Particle-Based Dendritic Growth via Twinning-Plane Induced Crystallization

2017 ◽  
Vol 18 (2) ◽  
pp. 1101-1108 ◽  
Author(s):  
Yang Zhao ◽  
Zhaoqi Ye ◽  
Lei Wang ◽  
Hongbin Zhang ◽  
Fangqi Xue ◽  
...  
Keyword(s):  
Dendritic Growth ◽  
Twinning Plane ◽  
Induced Crystallization

Atomic Arrangements and Bonding across a Twinning Plane in Graphite

1957 ◽  
Vol 109 (1-6) ◽  
pp. 226-230 ◽  
Author(s):  
John R. Platt
Keyword(s):  
Twinning Plane

Convective effects in microgravity on dendritic growth kinetics and morphologies

1996 ◽  
Author(s):  
M. Glicksman ◽  
M. Koss ◽  
L. Bushnell ◽  
J. LaCombe ◽  
E. Winsa
Keyword(s):  
Growth Kinetics ◽  
Dendritic Growth

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

2021 ◽  
pp. 129723
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
I.E. Merkulova ◽  
I.V. Korolkov ◽  
V.I. Vdovin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Suboxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Near-to-Stoichiometric Acidic Recovery of Spent Lithium-Ion Batteries through Induced Crystallization

2021 ◽  
Vol 9 (8) ◽  
pp. 3183-3194
Author(s):  
Yan Liu ◽  
Weiguang Lv ◽  
Xiaohong Zheng ◽  
Dingshan Ruan ◽  
Yongxia Yang ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Lithium Ion ◽  
Induced Crystallization

Metal induced crystallization of a-Si using a nano-layer of silicon oxide mask (MMIC)

2010 ◽  
pp. NA-NA
Author(s):  
Chunya Wu ◽  
Zhiguo Meng ◽  
Xuedong Li ◽  
Shuyun Zhao ◽  
Zhaojun Liu ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Metal Induced Crystallization ◽  
Induced Crystallization
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