Predicting the Onset of Metal–Insulator Transitions in Transition Metal Oxides—A First Step in Designing Neuromorphic Devices

2021 ◽  
Author(s):  
Shenli Zhang ◽  
Hien Vo ◽  
Giulia Galli
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Metal Insulator

scholarly journals Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides

2012 ◽  
Vol 86 (19) ◽  
Author(s):  
Xin Wang ◽  
M. J. Han ◽  
Luca de' Medici ◽  
Hyowon Park ◽  
C. A. Marianetti ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Double Counting ◽  
Metal Insulator

Metal-insulator transition in 3d transition-metal oxides with ABO3 and A2BO4 type structures

1991 ◽  
Vol 185-189 ◽  
pp. 1295-1296 ◽  
Author(s):  
H. Eisaki ◽  
T. Ido ◽  
K. Magoshi ◽  
M. Mochizuki ◽  
H. Yamatsu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Electro-forming of vacancy-doped metal-SrTiO3-metal structures

2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Physical Vapor Deposition ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Metal Insulator ◽  
Metal Structures ◽  
Wide Range ◽  
Metal Insulator Metal

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.

scholarly journals ORBITAL INSULATORS AND ORBITAL ORDER–DISORDER INDUCED METAL–INSULATOR TRANSITION IN TRANSITION-METAL OXIDES

2007 ◽  
Vol 21 (05) ◽  
pp. 691-706 ◽  
Author(s):  
DONG-MENG CHEN ◽  
LIANG-JIAN ZOU
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Thermal Fluctuation ◽  
Insulator Transition ◽  
Orbital Ordering ◽  
Excitation Spectra ◽  
Metal Insulator Transition ◽  
Orbital Order ◽  
Metal Insulator

The role of orbital ordering on metal–insulator transition in transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap of single-particle excitation spectra on the orbital order parameter is found. The thermal fluctuation drives the orbital order–disorder transition, diminishes the gap and leads to the metal–insulator transition. The unusual temperature dependence of the orbital polarization in the orbital insulator is also manifested in the resonant X-ray scattering intensity.

METAL-INSULATOR TRANSITIONS IN TRANSITION METAL OXIDES

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-1079-C1-1085 ◽  
Author(s):  
D. B. McWHAN ◽  
A. MENTH ◽  
J. P. REMEIKA
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Metal Insulator
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