scholarly journals Room-Temperature Intercalation and ∼1000-Fold Chemical Expansion for Scalable Preparation of High-Quality Graphene

2016 ◽  
Vol 28 (7) ◽  
pp. 2138-2146 ◽  
Author(s):  
Shan Lin ◽  
Lei Dong ◽  
Jiajia Zhang ◽  
Hongbin Lu
2021 ◽  
Vol 119 (6) ◽  
pp. 062103
Author(s):  
A. Brovko ◽  
P. Rusian ◽  
L. Chernyak ◽  
A. Ruzin

Nanoscale ◽  
2016 ◽  
Vol 8 (35) ◽  
pp. 16065-16072 ◽  
Author(s):  
Nan Guo ◽  
Weida Hu ◽  
Tao Jiang ◽  
Fan Gong ◽  
Wenjin Luo ◽  
...  

2009 ◽  
Vol 2 (1) ◽  
pp. 011003 ◽  
Author(s):  
Kazuhiro Sato ◽  
Jitsuo Ohta ◽  
Shigeru Inoue ◽  
Atsushi Kobayashi ◽  
Hiroshi Fujioka

2014 ◽  
Vol 07 (06) ◽  
pp. 1440007
Author(s):  
Michal Szot ◽  
Krzysztof Dybko ◽  
Piotr Dziawa ◽  
Leszek Kowalczyk ◽  
Viktor Domukhovski ◽  
...  

The electric and thermoelectric properties of novel, CdTe / PbTe layered nanocomposite material are investigated. The molecular beam epitaxy (MBE) method was used for preparation of samples with well controlled distances (from 20 to 70 nm) between the layers of CdTe nanograins embedded in PbTe thermoelectric matrix as well as with number of these layers from 2 to 10. The Hall effect measurements performed in temperature range from 4–300 K revealed that carrier mobility is strongly affected by scattering on CdTe grain boundaries. The observation of Shubnikov-de Haas oscillations confirms high quality of the samples and allows determination of effective mass of conducting electrons m* = 0.04m0. The measurements of the room temperature Seebeck coefficient together with electrical conductivity lead to the power factors which are comparable to those reported in PbTe / CdTe polycrystalline solid solutions.


1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.


2019 ◽  
Vol 7 (41) ◽  
pp. 12869-12875 ◽  
Author(s):  
Liyun Zhao ◽  
Qiuyu Shang ◽  
Yan Gao ◽  
Bao Jin ◽  
Tianyou Zhai ◽  
...  

Room temperature two-photon pumped green-color whispering-gallery-mode lasing from cadmium sulfide microflakes with dimensions below 60 nm.


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