Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has been obtained, even for epi thickness of 38 µm. Comprehensive characterization techniques conducted on the epi material obtained in this process have independently confirmed the high purity and low density of crystalline imperfections. Low temperature PL displays clear free exciton I77 recombination while no L1 line is discernable. DLTS measurements have confirmed a low concentration of Z1/2 and EH6/7 below or in the range of 1011 cm-3. Time resolved PL at room temperature performed on a 38 µm thick epi wafer gives long carrier lifetime in the range of 1.5 to above 5 µsec. PiN diodes with diode area up to 25 mm2 have demonstrated blocking voltages above 900V, with a max electric field of above 2.5 MV/cm.

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Epitaxial Growth of NbN Thin Films at Room Temperature by Ion-Beam Sputtering Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.20.993 ◽

1981 ◽

Vol 20 (5) ◽

pp. 993-994 ◽

Cited By ~ 14

Author(s):

Koji Takei ◽

Kazutoshi Nagai

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Room Temperature ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering

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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽

10.3390/nano11030788 ◽

2021 ◽

Vol 11 (3) ◽

pp. 788

Author(s):

Jian-Huan Wang ◽

Ting Wang ◽

Jian-Jun Zhang

Keyword(s):

Electron Microscopy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Core Shell ◽

High Quality ◽

Quantum Devices ◽

Wafer Scale ◽

Transmission Electron ◽

Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition

EPL (Europhysics Letters) ◽

10.1209/epl/i2002-00147-6 ◽

2002 ◽

Vol 59 (4) ◽

pp. 606-611 ◽

Cited By ~ 14

Author(s):

C Liu ◽

T Matsutani ◽

N Yamamoto ◽

M Kiuchi

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Room Temperature ◽

Ion Beam ◽

Oxide Films ◽

High Quality ◽

Oxygen Ion ◽

Ion Beam Assisted Deposition ◽

Tin Oxide Films

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Continuous and pulsed room temperature lasing behaviour at 1.55 μn on high quality factor photonic crystal microcavities

2010 12th International Conference on Transparent Optical Networks ◽

10.1109/icton.2010.5549042 ◽

2010 ◽

Author(s):

L. J. Martinez ◽

B. Alen ◽

I. Prieto ◽

D. Fuster ◽

L. Gonzalez ◽

...

Keyword(s):

Photonic Crystal ◽

Quality Factor ◽

Room Temperature ◽

High Quality Factor ◽

High Quality ◽

Photonic Crystal Microcavities

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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.299 ◽

2006 ◽

Vol 527-529 ◽

pp. 299-302

Author(s):

Hideki Shimizu ◽

Yosuke Aoyama

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Epitaxial Growth ◽

Deposition Rate ◽

Crystalline Structure ◽

Flow Rate ◽

Silicon Substrates ◽

High Quality ◽

Sic Films ◽

Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

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