Investigating the Influence of Resonant Bonding on the Optical Properties of Phase Change Materials (GeTe)xSnSb2Se4

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

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Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

Nanomaterials ◽

10.3390/nano11113029 ◽

2021 ◽

Vol 11 (11) ◽

pp. 3029

Author(s):

Xudong Wang ◽

Xueyang Shen ◽

Suyang Sun ◽

Wei Zhang

Keyword(s):

Thermal Stability ◽

Optical Properties ◽

Phase Change ◽

Phase Change Materials ◽

Random Access ◽

Global Memory ◽

Great Promise ◽

Germanium Telluride ◽

Structural Details ◽

Tie Line

Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.

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Optical properties of phase-change materials for optical recording

10.1117/12.280692 ◽

1997 ◽

Cited By ~ 3

Author(s):

Jean M. Bruneau ◽

Bernard Bechevet ◽

B. Valon ◽

M. F. Armand

Keyword(s):

Optical Properties ◽

Phase Change ◽

Phase Change Materials ◽

Optical Recording

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Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications

Materials ◽

10.3390/ma14123396 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3396

Author(s):

Irene Vassalini ◽

Ivano Alessandri ◽

Domenico de Ceglia

Keyword(s):

Optical Properties ◽

Solid State ◽

Phase Change ◽

Vanadium Dioxide ◽

Phase Change Materials ◽

Optoelectronic Devices ◽

Information Storage ◽

Stimuli Responsive ◽

Responsive Materials ◽

Solid State Devices

Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium dioxide (VO2) and their applications in the above-mentioned fields, with a detailed discussion on potential, limitations and challenges.

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