Optical properties of phase change materials for optical recording

Author(s):  
J.M. Bruneau ◽  
B. Bechevet ◽  
B. Valon ◽  
E. Butaud
1997 ◽  
Author(s):  
Jean M. Bruneau ◽  
Bernard Bechevet ◽  
B. Valon ◽  
M. F. Armand

Author(s):  
Y. Yang ◽  
Chun-Teh Li ◽  
S. M. Sadeghipour ◽  
M. Asheghi ◽  
H. Dieker ◽  
...  

Advances in the phase change optical recording technology strongly depend on the optical and thermal optimizations of the metal/ZnS-SiO2/phase change multilayer structure, which requires accurate modeling and thermal characterization of PC media structure. In the present work, the thermal conductivities of the amorphous and crystalline Ge4Sb1Te5 (GST) phase change; and ZnS-SiO2 dielectric layers of thickness in the range of 50 nm to 300 nm have been measured using the transient thermoreflectance technique. The data are between a factor of 2–4 different from the previously measured values for thin film and bulk samples. The thermal boundary resistance at metal/ZnS-SiO2 interface is found to be around 7×10−8 m2W−1. This might have serious implications for the future phase change recording application which attempts to achieve the high writing speeds by decreasing the thickness of ZnS-SiO2 dielectric layer.   This paper was also originally published as part of the Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems.


2007 ◽  
Vol 449-451 ◽  
pp. 627-630 ◽  
Author(s):  
Yong-Goo Yoo ◽  
Dong-Seok Yang ◽  
Ho-Jun Ryu ◽  
Woo-Seok Cheong ◽  
Mun-Cheol Baek

1986 ◽  
Vol 74 ◽  
Author(s):  
Ernesto E. Marinero

AbstractLaser-material interactions are pivotal to optical storage technology. Laser quenching and thermomagnetic processes form the memory basis for approaches based on “phase-change” materials and magneto-optical alloys respectively. Recent progress in phase-change materials indicates that compound semiconductors as well as single element materials are characterized by fast crystallization times. In this work we review, utilizing time-resolved optical and conductivity probes, the melt-kinetics and glass formation processes in Te thin films and the laser-induced crystallization of amorphous GeTe. The latter studies are complemented by x-ray diffraction and TEM analysis. Results are also presented on time-resolved Kerr rotation studies to investigate the magnetic domain formation kinetics in thermo-magnetic recording. Material research problems facing laser interactions with optical recording materials will be discussed.


2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.


2006 ◽  
Vol 100 (2) ◽  
pp. 024102 ◽  
Author(s):  
Y. Yang ◽  
C.-T. Li ◽  
S. M. Sadeghipour ◽  
H. Dieker ◽  
M. Wuttig ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 205
Author(s):  
Muhammad Shemyal Nisar ◽  
Xing Yang ◽  
Liangjun Lu ◽  
Jianping Chen ◽  
Linjie Zhou

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3029
Author(s):  
Xudong Wang ◽  
Xueyang Shen ◽  
Suyang Sun ◽  
Wei Zhang

Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.


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