Preparation of MFI Nanosheets with Distinctive Microstructures via Facile Alkaline Etching

Our objective in this study was to promote the growth of bone cells on biomedical titanium (Ti) implant surfaces via surface modification involving sandblasting, alkaline etching, and type I collagen immobilization using the natural cross-linker genipin. The resulting surface was characterized in terms topography, roughness, wettability, and functional groups, respectively using field emission scanning electron microscopy, 3D profilometry, and attenuated total reflection-Fourier transform infrared spectroscopy. We then evaluated the adhesion, proliferation, initial differentiation, and mineralization of human bone marrow mesenchymal stem cells (hMSCs). Results show that sandblasting treatment greatly enhanced surface roughness to promote cell adhesion and proliferation and that the immobilization of type I collagen using genipin enhanced initial cell differentiation as well as mineralization in the extracellular matrix of hMSCs. Interestingly, the nano/submicro-scale pore network and/or hydrophilic features on sandblasted rough Ti surfaces were insufficient to promote cell growth. However, the combination of all proposed surface treatments produced ideal surface characteristics suited to Ti implant applications.

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Patterning on single crystalline silicon by laser scanning and alkaline etching

Applied Surface Science ◽

10.1016/j.apsusc.2009.03.005 ◽

2009 ◽

Vol 255 (15) ◽

pp. 6857-6861 ◽

Cited By ~ 4

Author(s):

Takashi Hosono ◽

Hitoshi Tokura

Keyword(s):

Laser Scanning ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Alkaline Etching

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Tailorable magnetic properties of ε-Fe2O3/SiO2 hybrid via alkaline etching

Ceramics International ◽

10.1016/j.ceramint.2017.09.031 ◽

2017 ◽

Vol 43 (18) ◽

pp. 16482-16487 ◽

Cited By ~ 10

Author(s):

Yunguo Wang ◽

Ji Ma ◽

Sizhi Zuo-Jiang ◽

Kezheng Chen

Keyword(s):

Magnetic Properties ◽

Alkaline Etching

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Atomistic mechanism for the macroscopic effects induced by small additions of surfactants to alkaline etching solutions

Sensors and Actuators A Physical ◽

10.1016/j.sna.2009.10.023 ◽

2010 ◽

Vol 157 (1) ◽

pp. 91-95 ◽

Cited By ~ 15

Author(s):

M.A. Gosálvez ◽

P. Pal ◽

B. Tang ◽

K. Sato

Keyword(s):

Alkaline Etching

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Three-dimensional force sensor by novel alkaline etching technique

Sensors and Actuators A Physical ◽

10.1016/j.sna.2005.04.035 ◽

2005 ◽

Vol 123-124 ◽

pp. 620-626 ◽

Cited By ~ 23

Author(s):

É. Vázsonyi ◽

M. Ádám ◽

Cs. Dücső ◽

Z. Vízváry ◽

A.L. Tóth ◽

...

Keyword(s):

Three Dimensional ◽

Force Sensor ◽

Etching Technique ◽

Alkaline Etching

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Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/abddd8 ◽

2021 ◽

Vol 10 (1) ◽

pp. 014007

Author(s):

Sana Rachidi ◽

Virginie Loup ◽

Alain Campo ◽

Jean-Michel Hartmann ◽

Nicolas Posseme

Keyword(s):

Alkaline Etching

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Backside Exposure of Small-Sized TSVs Using Si/Cu Grinding, CMP, Cap Layer Deposition, and Alkaline Etching

International Symposium on Microelectronics ◽

10.4071/isom-ta14 ◽

2014 ◽

Vol 2014 (1) ◽

pp. 000019-000023 ◽

Cited By ~ 2

Author(s):

Naoya Watanabe ◽

Masahiro Aoyagi ◽

Daisuke Katagawa ◽

Tsubasa Bandoh ◽

Eiichi Yamamoto

Keyword(s):

Chemical Mechanical Polishing ◽

Grinding Wheel ◽

Alkaline Etching ◽

Layer Deposition ◽

New Process ◽

Cu Contamination ◽

Cap Layer ◽

Vitrified Bond ◽

Silicon Vias

For backside exposure of through-silicon vias (TSVs), we developed a new process using Si/Cu grinding, chemical mechanical polishing (CMP), cap layer deposition, and alkaline etching of Si. In this process, Si/Cu grinding without Cu burning or smearing was performed by using a novel grinding wheel (vitrified-bond type), with in situ cleaning of the grinding wheel by a high-pressure micro jet. CMP was then performed to remove grinding scratches generated by Si/Cu grinding. Next, slight Cu contamination in the Si region between TSVs was decreased by cap layer deposition and alkaline etching of Si. The cap layer was Ni-B film formed by electroless plating. We also applied the developed process to backside exposure of 4-μm-diameter TSVs. As a result, TSVs were exposed uniformly without grinding scratches and Cu contamination in Si region between TSVs was suppressed to < 2.7×1010 atoms/cm2.

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