Sputtering Yields for Mixtures of Organic Materials Using Argon Gas Cluster Ions

2015 ◽  
Vol 119 (42) ◽  
pp. 13433-13439 ◽  
Author(s):  
M. P. Seah ◽  
R. Havelund ◽  
A. G. Shard ◽  
I. S. Gilmore
Keyword(s):  
Organic Materials ◽  
Cluster Ions ◽  
Argon Gas ◽  
Sputtering Yields

Angle Dependence of Argon Gas Cluster Sputtering Yields for Organic Materials

2015 ◽  
Vol 119 (7) ◽  
pp. 3297-3303 ◽  
Author(s):  
M. P. Seah ◽  
S. J. Spencer ◽  
A. G. Shard
Keyword(s):  
Organic Materials ◽  
Argon Gas ◽  
Angle Dependence ◽  
Sputtering Yields

Measurement of sputtering yields and damage in C60 SIMS depth profiling of model organic materials

2007 ◽  
Vol 39 (4) ◽  
pp. 294-298 ◽  
Author(s):  
A. G. Shard ◽  
P. J. Brewer ◽  
F. M. Green ◽  
I. S. Gilmore
Keyword(s):  
Organic Materials ◽  
Depth Profiling ◽  
Sputtering Yields ◽  
Sims Depth Profiling

Sputtering Yields for Gold Using Argon Gas Cluster Ion Beams

2012 ◽  
Vol 116 (44) ◽  
pp. 23735-23741 ◽  
Author(s):  
Li Yang ◽  
Martin P. Seah ◽  
Ian S. Gilmore
Keyword(s):  
Ion Beams ◽  
Argon Gas ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yields

Experimental study of the dissociation of 100?600 keV hydrogen cluster ions in an argon gas target

1986 ◽  
Vol 2 (1) ◽  
pp. 87-90 ◽  
Author(s):  
M. Chevallier ◽  
A. Clouvas ◽  
H. J. Frischkorn ◽  
M. J. Gaillard ◽  
J. C. Poizat ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cluster Ions ◽  
Argon Gas ◽  
Gas Target

Sputtering yield measurements with size-selected gas cluster ion beams

2009 ◽  
Vol 1181 ◽  
Author(s):  
Kazuya Ichiki ◽  
Satoshi Ninomiya ◽  
Toshio Seki ◽  
Takaaki Aoki ◽  
Jiro Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Energy Conditions ◽  
Si Substrates ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
Good Agreement

AbstractAr cluster ions in the size range 1000�16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

Depth resolution at organic interfaces sputtered by argon gas cluster ions: the effect of energy, angle and cluster size

The Analyst ◽  
2015 ◽  
Vol 140 (19) ◽  
pp. 6508-6516 ◽  
Author(s):  
M. P. Seah ◽  
S. J. Spencer ◽  
R. Havelund ◽  
I. S. Gilmore ◽  
A. G. Shard
Keyword(s):  
Cluster Size ◽  
Depth Resolution ◽  
Cluster Ions ◽  
Operating Parameters ◽  
Organic Analysis ◽  
Argon Gas ◽  
Organic Interfaces ◽  
First Time

This paper presents, for the first time, the different operating parameters defining the best depth resolution in SIMS organic analysis.

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