scholarly journals SIMS of Organic Materials—Interface Location in Argon Gas Cluster Depth Profiles Using Negative Secondary Ions

2018 ◽  
Vol 29 (4) ◽  
pp. 774-785 ◽  
Author(s):  
R. Havelund ◽  
M. P. Seah ◽  
M. Tiddia ◽  
I. S. Gilmore
Keyword(s):  
Organic Materials ◽  
Argon Gas ◽  
Depth Profiles ◽  
Secondary Ions ◽  
Interface Location

Observed damage during Argon gas cluster depth profiles of compound semiconductors

2014 ◽  
Vol 116 (5) ◽  
pp. 054908 ◽  
Author(s):  
Anders J. Barlow ◽  
Jose F. Portoles ◽  
Peter J. Cumpson
Keyword(s):  
Compound Semiconductors ◽  
Argon Gas ◽  
Depth Profiles ◽  
Observed Damage

scholarly journals Reconstructing accurate ToF-SIMS depth profiles for organic materials with differential sputter rates

The Analyst ◽  
2015 ◽  
Vol 140 (17) ◽  
pp. 6005-6014 ◽  
Author(s):  
Adam J. Taylor ◽  
Daniel J. Graham ◽  
David G. Castner
Keyword(s):  
Polymer Films ◽  
Organic Materials ◽  
Depth Profiles ◽  
New Methods ◽  
Tof Sims

This study describes new methods to transform and correct ToF-SIMS depth profiles of multilayer polymer films exhibiting differential sputter rates.

Sputtering Yields for Mixtures of Organic Materials Using Argon Gas Cluster Ions

2015 ◽  
Vol 119 (42) ◽  
pp. 13433-13439 ◽  
Author(s):  
M. P. Seah ◽  
R. Havelund ◽  
A. G. Shard ◽  
I. S. Gilmore
Keyword(s):  
Organic Materials ◽  
Cluster Ions ◽  
Argon Gas ◽  
Sputtering Yields

Angle Dependence of Argon Gas Cluster Sputtering Yields for Organic Materials

2015 ◽  
Vol 119 (7) ◽  
pp. 3297-3303 ◽  
Author(s):  
M. P. Seah ◽  
S. J. Spencer ◽  
A. G. Shard
Keyword(s):  
Organic Materials ◽  
Argon Gas ◽  
Angle Dependence ◽  
Sputtering Yields

scholarly journals Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O2+ bombardment of organic materials

2007 ◽  
Vol 25 (3) ◽  
pp. 480-484 ◽  
Author(s):  
Shane E. Harton ◽  
Zhengmao Zhu ◽  
Frederick A. Stevie ◽  
Dieter P. Griffis ◽  
Harald Ade
Keyword(s):  
Organic Materials ◽  
Mass Fractionation ◽  
Secondary Ions

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

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