Fabrication and Growth Control of Metal Nanostructures through Exploration of Atomic Force Microscopy-Based Patterning and Electroless Deposition Conditions

2020 ◽  
Vol 124 (46) ◽  
pp. 25588-25601
Author(s):  
Christina M. Edwards ◽  
Sasanka B. Ulapane ◽  
Nilan J. B. Kamathewatta ◽  
Hannah M. Ashberry ◽  
Cindy L. Berrie
Keyword(s):  
Atomic Force Microscopy ◽  
Electroless Deposition ◽  
Growth Control ◽  
Metal Nanostructures ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Conditions

Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminium Films

1994 ◽  
Vol 354 ◽  
Author(s):  
C.H. Wang ◽  
W.C. Shih ◽  
R.E. Somekh ◽  
J.E. Evetts ◽  
D. Jackson
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Film Thickness ◽  
Impurity Level ◽  
General Context ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preliminary Work ◽  
Infra Red ◽  
Deposition Conditions

AbstractWe report the results of a study of IR emissivity of aluminium films as a function of impurity level, film thickness and sputtering conditions. Preliminary work suggests that for a given level of film impurities and deposition conditions, the JJR emissivity can be minimized with a certain film thickness. The influence of impurity level, film thickness, and sputter pressure on IR emissivity has been correlated with the resistivity and the surface roughness (measured by atomic force microscopy). The results are discussed in the general context of the Drude theory with allowances for the observed roughness.

Fabrication of Metal Nanostructures by Atomic Force Microscopy Nanomachining and Related Applications

2010 ◽  
Vol 10 (7) ◽  
pp. 4482-4485 ◽  
Author(s):  
Hsin-Yu Lin ◽  
Hsiang-An Chen ◽  
Yi-Jen Wu ◽  
Jyh-Hann Huang ◽  
Heh-Nan Lin
Keyword(s):  
Atomic Force Microscopy ◽  
Metal Nanostructures ◽  
Force Microscopy ◽  
Atomic Force

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 424 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. van der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

scholarly journals Chiral nanostructure in polymers under different deposition conditions observed using atomic force microscopy of monolayers: poly(phenylacetylene)s as a case study

2017 ◽  
Vol 53 (3) ◽  
pp. 481-492 ◽  
Author(s):  
F. Freire ◽  
E. Quiñoá ◽  
R. Riguera
Keyword(s):  
Atomic Force Microscopy ◽  
Secondary Structure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Conditions

Techniques used for the study of the secondary structure of polymers by means of atomic-force microscopy are evaluated.

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. Van Der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Suppression of Reaction between Si Substrate and Obliquely Deposited Fe Atoms

2004 ◽  
Vol 849 ◽  
Author(s):  
S. Jomori ◽  
M. Suzuki ◽  
K. Nakajima ◽  
K. Kimura
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Normal Direction ◽  
Silicide Formation ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Lattice Position ◽  
Initial Stage ◽  
Deposition Conditions

ABSTRACTWe have investigated the initial stage of the growth of obliquely deposited Fe on a Si substrate held at 470 °C with atomic force microscopy (AFM) and high resolution Rutherford backscattering spectroscopy (HRBS). During the deposition from the normal direction, many Si atoms are displaced from their lattice position due to the reaction with the deposited Fe. On the contrary, the number of displaced Si atoms decreases significantly, and the nanoislands of a few 10 nm in diameter grow selectively when Fe is deposited at 85°. This is clear evidence that the local nucleation processes for the Fe silicide formation is modified by the geometrical deposition conditions.

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