Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology

2021 ◽  
Author(s):  
Julia D. Lenef ◽  
Jaesung Jo ◽  
Orlando Trejo ◽  
David J. Mandia ◽  
Rebecca L. Peterson ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Copper Oxide ◽  
Oxidation State ◽  
Atomic Layer ◽  
Oxide Semiconductors ◽  
Layer Deposition ◽  
Phase Oxidation ◽  
P Type

scholarly journals Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor

2018 ◽  
Vol 30 (24) ◽  
pp. 8983-8984 ◽  
Author(s):  
Dustin Z. Austin ◽  
Melanie A. Jenkins ◽  
Derryl Allman ◽  
Sallie Hose ◽  
David Price ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxidation State ◽  
Ruthenium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

2020 ◽  
Vol 3 (10) ◽  
pp. 10200-10208
Author(s):  
Vincent Vandalon ◽  
Marcel A. Verheijen ◽  
Wilhelmus M. M. Kessels ◽  
Ageeth A. Bol
Keyword(s):  
Atomic Layer Deposition ◽  
Carrier Density ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

2014 ◽  
Vol 26 (21) ◽  
pp. 6088-6091 ◽  
Author(s):  
Jeong Hwan Han ◽  
Yoon Jang Chung ◽  
Bo Keun Park ◽  
Seong Keun Kim ◽  
Hyo-Suk Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

Single material TiO 2 thin film by atomic layer deposition for antireflection and surface passivation applications on p-type c-Si

2018 ◽  
Vol 451 ◽  
pp. 121-127 ◽  
Author(s):  
Tsung-Cheng Chen ◽  
Tsuo-Chuan Yang ◽  
Hsyi-En Cheng ◽  
Ing-Song Yu ◽  
Zu-Po Yang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Type C ◽  
P Type ◽  
Single Material

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

2019 ◽  
Vol 257 (2) ◽  
pp. 1900472 ◽  
Author(s):  
Elzbieta Guziewicz ◽  
Tomasz Aleksander Krajewski ◽  
Ewa Przezdziecka ◽  
Krzysztof P. Korona ◽  
Nikodem Czechowski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Type Material ◽  
Layer Deposition ◽  
P Type

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

scholarly journals Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications

2013 ◽  
Vol 107 ◽  
pp. 223-228 ◽  
Author(s):  
Marcel Melzer ◽  
Thomas Waechtler ◽  
Steve Müller ◽  
Holger Fiedler ◽  
Sascha Hermann ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Copper Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes
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