Air-Stable Conversion of Separated Carbon Nanotube Thin-Film Transistors from p-Type to n-Type Using Atomic Layer Deposition of High-κ Oxide and Its Application in CMOS Logic Circuits

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3284-3292 ◽  
Author(s):  
Jialu Zhang ◽  
Chuan Wang ◽  
Yue Fu ◽  
Yuchi Che ◽  
Chongwu Zhou
2017 ◽  
Vol 5 (12) ◽  
pp. 3139-3145 ◽  
Author(s):  
Soo Hyun Kim ◽  
In-Hwan Baek ◽  
Da Hye Kim ◽  
Jung Joon Pyeon ◽  
Taek-Mo Chung ◽  
...  

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).


2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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