Study of Surface and Bulk Recombination Kinetics of Two-Dimensional Inorganic–Organic Hybrid Semiconductors under Linear and Nonlinear Femtosecond Transient Absorption Analysis

Author(s):  
Mohammad Adnan ◽  
G. Vijaya Prakash
2016 ◽  
Vol 18 (22) ◽  
pp. 14904-14910 ◽  
Author(s):  
Huiyu Zhang ◽  
Yaping Chen ◽  
Rong Lu ◽  
Ruiyu Li ◽  
Anchi Yu

The charge carrier kinetics of carbon nitride colloid was investigated using a combination of femtosecond transient absorption and picosecond time-resolved fluorescence spectroscopy.


2020 ◽  
Vol 110 ◽  
pp. 110511
Author(s):  
Pawan K. Kanaujia ◽  
Kshetra Mohan Dehury ◽  
Mohammad Adnan ◽  
G. Vijaya Prakash

ACS Omega ◽  
2019 ◽  
Vol 4 (22) ◽  
pp. 19565-19572 ◽  
Author(s):  
Mohammad Adnan ◽  
Kotla Nageswara Rao ◽  
Jitendra Nath Acharyya ◽  
Dinesh Kumar ◽  
Kshetra Mohan Dehury ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3007
Author(s):  
Dmitry Cherepanov ◽  
Andrei Kostrov ◽  
Fedor Gostev ◽  
Ivan Shelaev ◽  
Mikhail Motyakin ◽  
...  

For the first time, a specific time-delayed peak was registered in the femtosecond transient absorption (TA) spectra of ZnxCd1-xS/ZnS (x~0.5) alloy quantum dots (QDs) doped with Mn2+, which was interpreted as the electrochromic Stark shift of the band-edge exciton. The time-delayed rise and decay kinetics of the Stark peak in the manganese-doped QDs significantly distinguish it from the kinetics of the Stark peak caused by exciton–exciton interaction in the undoped QDs. The Stark shift in the Mn2+-doped QDs developed at a 1 ps time delay in contrast to the instantaneous appearance of the Stark shift in the undoped QDs. Simultaneously with the development of the Stark peak in the Mn2+-doped QDs, stimulated emission corresponding to 4T1-6A1 Mn2+ transition was detected in the subpicosecond time domain. The time-delayed Stark peak in the Mn2+-doped QDs, associated with the development of an electric field in QDs, indicates the appearance of charge transfer intermediates in the process of exciton quenching by manganese ions, leading to the ultrafast Mn2+ excitation. The usually considered mechanism of the nonradiative energy transfer from an exciton to Mn2+ does not imply the development of an electric field in a QD. Femtosecond TA data were analyzed using a combination of empirical and computational methods. A kinetic scheme of charge transfer processes is proposed to explain the excitation of Mn2+. The kinetic scheme includes the reduction of Mn2+ by a 1Se electron and the subsequent oxidation of Mn1+ with a hole, leading to the formation of an excited state of manganese.


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 770
Author(s):  
Zeynep Ezgi Eroglu ◽  
Dillon Contreras ◽  
Pouya Bahrami ◽  
Nurul Azam ◽  
Masoud Mahjouri-Samani ◽  
...  

Two-dimensional transition metal dichalcogenides (2D-TMDs) hold a great potential to platform future flexible optoelectronics. The beating hearts of these materials are their excitons known as XA and XB, which arise from transitions between spin-orbit split (SOS) levels in the conduction and valence bands at the K-point. The functionality of 2D-TMD-based devices is determined by the dynamics of these excitons. One of the most consequential channels of exciton decay on the device functionality is the defect-assisted recombination (DAR). Here, we employ steady-state absorption and emission spectroscopies, and pump density-dependent femtosecond transient absorption spectroscopy to report on the effect of DAR on the lifetime of excitons in monolayers of tungsten disulfide (2D-WS2) and diselenide (2D-WSe2). These pump-probe measurements suggested that while exciton decay dynamics in both monolayers are driven by DAR, in 2D-WS2, defect states near the XB exciton fill up before those near the XA exciton. However, in the 2D-WSe2 monolayer, the defect states fill up similarly. Understanding the contribution of DAR on the lifetime of excitons and the partition of this decay channel between XA and XB excitons may open new horizons for the incorporation of 2D-TMD materials in future optoelectronics.


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