Investigation of Substrate Swell-Induced Defect Formation in Suspended Graphene upon Helium Ion Implantation

2021 ◽  
Author(s):  
Shixuan He ◽  
Wanyi Xie ◽  
Yongna Zhang ◽  
Shaoxi Fang ◽  
Daming Zhou ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Suspended Graphene ◽  
Helium Ion

Quantum dot formation on suspended graphene nanomesh by helium ion beam milling technology

2021 ◽  
Author(s):  
Fayong Liu ◽  
Manoharan Muruganathan ◽  
Shinichi Ogawa ◽  
Yukinori Morita ◽  
Zhongwang Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ion Beam ◽  
Suspended Graphene ◽  
Helium Ion ◽  
Graphene Nanomesh

Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

Irradiation hardening of pure vanadium and vanadium alloys due to helium ion implantation and displacement damage

2020 ◽  
Vol 540 ◽  
pp. 152381
Author(s):  
Yitao Yang ◽  
Tingxing Yan ◽  
Chonghong Zhang ◽  
Xin Fu ◽  
Tongda Ma ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Displacement Damage ◽  
Vanadium Alloys ◽  
Irradiation Hardening ◽  
Helium Ion

scholarly journals Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

2016 ◽  
Vol 383 ◽  
pp. 38-46 ◽  
Author(s):  
Lucile Pentecoste ◽  
Anne-Lise Thomann ◽  
Amer Melhem ◽  
Amael Caillard ◽  
Stéphane Cuynet ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Low Energy ◽  
Helium Ion
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