Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Study of Carbon Thin Film Deposition on Various Buffer Layer as Characterized by X-Ray Diffraction and Raman Spectroscopy

2015 ◽  
Vol 1112 ◽  
pp. 106-109
Author(s):  
Angga Virdian ◽  
Heldi Alfiadi ◽  
Yudi Darma
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Raman Spectra ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Thin Film ◽  
Carbon Based

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

2017 ◽  
Vol 17 (01n02) ◽  
pp. 1760004 ◽  
Author(s):  
K. N. Chidambara Kumar ◽  
S. K. Khadeer Pasha ◽  
Kalim Deshmukh ◽  
K. Chidambaram ◽  
G. Shakil Muhammad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Sulfide ◽  
Visible Region ◽  
Ferromagnetic Material ◽  
Cutoff Wavelength ◽  
Face Centered Cubic ◽  
X Ray ◽  
Sensor Applications ◽  
Iron Doped

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV–vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03[Formula: see text]eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500–720[Formula: see text]nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Simulation of 3D Films Deposited by Glancing Angle Deposition Using 3D-Films

2000 ◽  
Vol 616 ◽  
Author(s):  
T. Smy ◽  
D. Vick ◽  
M. J. Brett ◽  
S. K. Dew ◽  
A. T. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Glancing Angle Deposition ◽  
Film Deposition ◽  
Porous Thin Films ◽  
Glancing Angle ◽  
Memory Resources ◽  
Angle Deposition

AbstractA new fully three dimensional (3D) ballistic deposition simulator 3D-FILMS has been developed for the modeling of thin film deposition and structure. The simulator may be implemented using the memory resources available to workstations. In order to illustrate the capabilities of 3D-FILMS, we apply it to the growth of engineered porous thin films produced by the technique of GLancing Angle Deposition (GLAD).

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

scholarly journals Thin Film Deposition: Solution Based Approach

2021 ◽  
Author(s):  
Kashif Tufail Chaudhary
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Inkjet Printing ◽  
High Efficiency ◽  
Scale Up ◽  
Thin Film Deposition ◽  
Dip Coating ◽  
Film Deposition ◽  
Promising Technique ◽  
Thin Film Fabrication

The wet chemical processing opens the way to deposit thin film with the versatility and ease for a variety of materials. Liquid film deposition involves the application of a liquid precursor on a substrate which is then converted to the required coating material in a subsequent post-treatment step. Different non-vacuum solution based deposition techniques have been developed to grow thin films with high efficiency and functionality. Spin coating is one of an effective technique for thin film fabrication due to low cost, uniformity, less hazardous, and capability of easy scaling up. The typical process involves depositing a small amount of a fluid onto the center of a substrate and then spinning the substrate at high speed. Dip coating is another simple, cost effective route with feasibility to scale-up for commercial production. The dip coating process can be divided into three important technical stages, immersion, withdrawal and evaporation. The coating may be subjected to further heat treatment in order to burn out residual compounds and induce crystallization of the functional oxides. Spray coating is a promising technique to grow thin film in research and industry to prepare thin and thick films. It is an easy approach to fabricate thin film with uniform distribution at small scale from a few nanometers to micrometers in thickness. Inkjet printing is the emerging promising technique to develop large-scale, and flexible thin films. The inkjet printing process allow easy customization to grow variety of complex structures.

scholarly journals A review on Spray pyrolysis deposited CZTS thin films for solar cell applications

2021 ◽  
Vol 23 (09) ◽  
pp. 1196-1206
Author(s):  
C.S.A. Raj ◽  
◽  
S. Sebastian ◽  
Susai Rajendran ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Research Area ◽  
Film Deposition ◽  
Deposition Technique ◽  
Czts Thin Films

Cu2ZnSnS4 generally abridged as CZTS is a potential material for economical thin film solar cells, due to its appropriate band gap energy of around 1.5 eV and great absorption coefficient of above 104 cm-1. All the constituents of this material are plentiful in the earth’s crust, and they are non-hazardous making it an elegant alternative. Subsequent to the early achievement of the CZTS based solar cell with its light to electrical conversion efficiency of 0.6%, significant advancement in this research area has been attained, particularly in the last seven years. Currently, the conversion effectiveness of the CZTS thin film solar cell has enhanced to 24%. More than 500 papers on CZTS have been available and the greater part of these converses the preparation of CZTS thin films by diverse methods. Until now, many physical and chemical methods have been engaged for preparing CZTS thin films. Amongst them, spray pyrolysis is a flexible deposition technique. Spray pyrolysis is a simple deposition technique that finds use in widespread areas of thin film deposition research. This method is appropriate for depositing good quality films with low cost, clean deposition, and simplicity and flexibility in the manufacturing design. This script, reviews the synthesis of CZTS semiconductor thin films deposited by spray pyrolysis. This analysis initiates with a portrayal of the spray pyrolysis system, and then establish the CZTS and preparation of the CZTS precursor for coating. A review of spray pyrolysis of CZTS thin films are discussed in detail. To conclude, we present perspectives for advancements in spray pyrolysis for a CZTS based solar cell absorber layer.

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