Copper Doping of Low-Dimensional Se-Based Semiconductor Structures Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 123 (32) ◽  
pp. 19938-19944
Author(s):  
Piotr Wojnar ◽  
Małgorzata Szymura ◽  
Łukasz Kłopotowski ◽  
Aleksander Rodek ◽  
Tomasz Kazimierczuk ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Copper Doping ◽  
Semiconductor Structures ◽  
Low Dimensional

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ -doped backgates

1999 ◽  
Vol 30 (4-5) ◽  
pp. 315-318
Author(s):  
M.L. Leadbeater ◽  
T.M. Burke ◽  
E.H. Linfield ◽  
N.K. Patel ◽  
D.A. Ritchie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Dimensional
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