New Two-Dimensional Wide Band Gap Hydrocarbon Insulator by Hydrogenation of a Biphenylene Sheet

Author(s):  
Yujie Liao ◽  
XiZhi Shi ◽  
Tao Ouyang ◽  
Jin Li ◽  
Chunxiao Zhang ◽  
...  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...


2017 ◽  
Vol 121 (36) ◽  
pp. 19634-19641 ◽  
Author(s):  
Kai Zhang ◽  
Yunpeng Qin ◽  
Feng Li ◽  
Liangmin Yu ◽  
Mingliang Sun

Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...


2D Materials ◽  
2021 ◽  
Author(s):  
Geoffroy Kremer ◽  
Juan Camilo Alvarez Quiceno ◽  
Thomas Pierron ◽  
Cesar Gonzalez ◽  
Muriel Sicot ◽  
...  

2020 ◽  
Vol 59 (22) ◽  
pp. 16132-16136
Author(s):  
Shengzi Zhang ◽  
Fei Liang ◽  
Pifu Gong ◽  
Yi Yang ◽  
Zheshuai Lin

2018 ◽  
Vol 122 (4) ◽  
pp. 47002 ◽  
Author(s):  
Yan Qian ◽  
Zhengwei Du ◽  
Renzhu Zhu ◽  
Haiping Wu ◽  
Erjun Kan ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (48) ◽  
pp. 30320-30326 ◽  
Author(s):  
Shao-Gang Xu ◽  
Yu-Jun Zhao ◽  
Xiao-Bao Yang ◽  
Hu Xu

Multilayer iron borides FeBx(x= 4, 6, 8, 10) are wide-band-gap semiconductors; the electronic and optical properties of these semiconductors may be modulated by biaxial strains.


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