Restoring the Coherence of Quantum Emitters through Optically Driven Motional Narrowing Forces

Nano Letters ◽  
2021 ◽  
Author(s):  
Mathias Pont ◽  
Anne-Laurence Phaneuf-L’Heureux ◽  
Régis André ◽  
Sébastien Francoeur
Keyword(s):  
Motional Narrowing ◽  
Quantum Emitters

Spin-Echo Experiment with NMR Spectra only Partially Narrowed by an Insufficiently Fast Motion

2003 ◽  
Vol 68 (7) ◽  
pp. 1193-1205
Author(s):  
Jaromír Jakeš
Keyword(s):  
Time Delay ◽  
Autocorrelation Function ◽  
Nmr Spectra ◽  
Spin Echo ◽  
Slow Motion ◽  
Linear Least Squares ◽  
Least Squares Adjustment ◽  
Fast Motion ◽  
Motional Narrowing ◽  
Gaussian Line

The spin-echo experiment on a spin system with only partial motional narrowing and an exponential field autocorrelation function is considered. The pattern of the intensity decrease in the echo spectra depends on the ratio τ/τc of the time delay τ in the echo experiment to the correlation time τc of the narrowing motion. With the large ratios (fast motion), the decrease is the same as in the case of extreme narrowing; to obtain undistorted T2 values, the ratio should be at least several units in the single-echo experiment and at least few decades in the multiple-echo experiment. With the small ratios (slow motion), the logarithmic decrease depends non-linearly on τ, and the T2 value found by the linear least-squares adjustment is much longer than that obtained from the extreme narrowing approximation. At very small ratios, the multiple echo yields about 3τc/(ωpτ)2 for T2 as compared with 1/(ωp2rc) obtained from the extreme narrowing approximation; ωp2 is the second moment of the Gaussian line being narrowed. The expression for T2 in the multiple spin echo is similar to that previously found for T2e in the solid multiple spin echo. The echo experiment changes the line shape, which at large τ/τc approaches the Lorentzian one. The case of a multiexponential field autocorrelation function is also briefly considered.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bottom Up ◽  
Boron Nitride Nanoparticles ◽  
Quantum Emitters

scholarly journals Prospects and challenges of quantum emitters in 2D materials

2021 ◽  
Vol 118 (24) ◽  
pp. 240502
Author(s):  
Shaimaa I. Azzam ◽  
Kamyar Parto ◽  
Galan Moody
Keyword(s):  
2D Materials ◽  
Quantum Emitters

scholarly journals Dynamics of matter-wave quantum emitters in a structured vacuum

2020 ◽  
Vol 2 (4) ◽  
Author(s):  
Michael Stewart ◽  
Joonhyuk Kwon ◽  
Alfonso Lanuza ◽  
Dominik Schneble
Keyword(s):  
Matter Wave ◽  
Quantum Emitters

Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching

ACS Nano ◽  
2021 ◽  
Author(s):  
Minho Choi ◽  
Seongmoon Jun ◽  
Kie Young Woo ◽  
Hyun Gyu Song ◽  
Hwan-Seop Yeo ◽  
...  
Keyword(s):  
High Purity ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Luminescence Quenching ◽  
Quantum Emitters

scholarly journals Effects of gap thickness and emitter location on the photoluminescence enhancement of monolayer MoS2 in a plasmonic nanoparticle-film coupled system

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 2097-2105
Author(s):  
Xiaozhuo Qi ◽  
Tsz Wing Lo ◽  
Di Liu ◽  
Lantian Feng ◽  
Yang Chen ◽  
...  
Keyword(s):  
Near Field ◽  
Central Area ◽  
Field Enhancement ◽  
Coupled System ◽  
Film Structure ◽  
Plasmonic Nanoparticle ◽  
Emitter Location ◽  
Radiation Properties ◽  
Radiation Enhancement ◽  
Quantum Emitters

AbstractPlasmonic nanocavities comprised of metal film-coupled nanoparticles have emerged as a versatile nanophotonic platform benefiting from their ultrasmall mode volume and large Purcell factors. In the weak-coupling regime, the particle-film gap thickness affects the photoluminescence (PL) of quantum emitters sandwiched therein. Here, we investigated the Purcell effect-enhanced PL of monolayer MoS2 inserted in the gap of a gold nanoparticle (AuNP)–alumina (Al2O3)–gold film (Au Film) structure. Under confocal illumination by a 532 nm CW laser, we observed a 7-fold PL peak intensity enhancement for the cavity-sandwiched MoS2 at an optimal Al2O3 thickness of 5 nm, corresponding to a local PL enhancement of ∼350 by normalizing the actual illumination area to the cavity’s effective near-field enhancement area. Full-wave simulations reveal a counterintuitive fact that radiation enhancement comes from the non-central area of the cavity rather than the cavity center. By scanning an electric dipole across the nanocavity, we obtained an average radiation enhancement factor of about 65 for an Al2O3 spacer thickness of 4 nm, agreeing well with the experimental thickness and indicating further PL enhancement optimization. Our results indicate the importance of configuration optimization, emitter location and excitation condition when using such plasmonic nanocavities to modulate the radiation properties of quantum emitters.

scholarly journals Towards practical applications of quantum emitters in boron nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Koperski ◽  
K. Pakuła ◽  
K. Nogajewski ◽  
A. K. Dąbrowska ◽  
M. Tokarczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Vapour Phase ◽  
Emission Characteristics ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Polydimethylsiloxane Films ◽  
Background Luminescence ◽  
Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

scholarly journals Radiative properties of quantum emitters in boron nitride from excited state calculations and Bayesian analysis

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Shiyuan Gao ◽  
Hsiao-Yi Chen ◽  
Marco Bernardi
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Single Photon ◽  
Radiative Lifetime ◽  
Radiative Properties ◽  
Data Set ◽  
Radiative Lifetimes ◽  
Emission Energy ◽  
Single Photon Emitters ◽  
Quantum Emitters

AbstractPoint defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states and radiative lifetimes of over 20 native defects and carbon or oxygen impurities in hBN using ab initio density functional theory and GW plus Bethe-Salpeter equation calculations, generating a large data set of their emission energy, polarization and lifetime. We find a wide variability across quantum emitters, with exciton energies ranging from 0.3 to 4 eV and radiative lifetimes from ns to ms for different defect structures. Through a Bayesian statistical analysis, we identify various high-likelihood charge-neutral defect emitters, among which the native VNNB defect is predicted to possess emission energy and radiative lifetime in agreement with experiments. Our work advances the microscopic understanding of hBN single-photon emitters and introduces a computational framework to characterize and identify quantum emitters in 2D materials.

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