Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

2020 ◽  
Vol 2 (6) ◽  
pp. 1653-1660
Author(s):  
Yong-Ping Wang ◽  
Xiaohan Wu ◽  
Wen-Jun Liu ◽  
David Wei Zhang ◽  
Shi-Jin Ding
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Copper Diffusion ◽  
Low Resistivity ◽  
Layer Deposition

A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures

2018 ◽  
Vol 18 (12) ◽  
pp. 8333-8336 ◽  
Author(s):  
Guangde Wang ◽  
Xinyu Zhang ◽  
Wenlong Jiang ◽  
Lizhong Wang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Visible Region ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Low Resistivity ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Layer Deposition ◽  
Doping Ratio

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

scholarly journals Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics

2020 ◽  
Vol 12 (36) ◽  
pp. 40443-40452
Author(s):  
M. C. Giordano ◽  
K. Baumgaertl ◽  
S. Escobar Steinvall ◽  
J. Gay ◽  
M. Vuichard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Magnetization Dynamics ◽  
Low Resistivity ◽  
Layer Deposition

Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

2017 ◽  
Vol 29 (15) ◽  
pp. 6502-6510 ◽  
Author(s):  
Katja Väyrynen ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Daniel Peeters ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tertiary Butyl ◽  
Low Resistivity ◽  
Layer Deposition

Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

2018 ◽  
Vol 36 (5) ◽  
pp. 051505 ◽  
Author(s):  
Igor Krylov ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Xianbin Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Low Resistivity ◽  
Layer Deposition

Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition

2011 ◽  
Vol 23 (20) ◽  
pp. 4417-4419 ◽  
Author(s):  
Thomas J. Knisley ◽  
Thiloka C. Ariyasena ◽  
Timo Sajavaara ◽  
Mark J. Saly ◽  
Charles H. Winter
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Purity ◽  
Atomic Layer ◽  
Copper Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Low Resistivity ◽  
Layer Deposition

Low-temperature plasma-enhanced atomic layer deposition growth of WNxCy from a novel precursor for barrier applications in nanoscale devices

2007 ◽  
Vol 22 (3) ◽  
pp. 703-709 ◽  
Author(s):  
Wanxue Zeng ◽  
Xiaodong Wang ◽  
Sumit Kumar ◽  
David W. Peters ◽  
Eric T. Eisenbraun
Keyword(s):  
Surface Roughness ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Performance Measurements ◽  
Temperature Plasma ◽  
Excellent Thermal Stability ◽  
Copper Diffusion ◽  
Layer Deposition

A low-temperature plasma-enhanced atomic layer deposition (PEALD) process has been developed for the growth of ultrathin WNxCy films, using a halide-free W precursor. A 32-nm-thick PEALD WNxCy film deposited using this process at 250 °C possesses a composition of W72C20N5, resistivity of ∼250 μΩ·cm, a root-mean-square (rms) surface roughness of 0.23 nm, and a thickness conformality of more than 80% on trench structures with a width of 120 nm and an aspect ratio of 11. The WNxCy films exhibited excellent thermal stability, whereby resistivity, thickness, surface roughness, and crystal structure were stable after 30 min anneals in 700 Torr, forming gas ambient at temperatures up to 700 °C. Copper diffusion barrier performance measurements show that a 9 nm thick WNxCy film could prevent copper diffusion after a 30 min anneal at 700 °C, while a 2-nm-thick film could prevent copper diffusion after a 30 min anneal at 500 °C.

Plasma-Enhanced Atomic Layer Deposition of Ta(C)N Thin Films for Copper Diffusion Barrier

2019 ◽  
Vol 25 (4) ◽  
pp. 301-308 ◽  
Author(s):  
Kwang-Ho Kim ◽  
Seong-Jun Jeong ◽  
Jaesik Yoon ◽  
Young-Moon Kim ◽  
Se-hun Kwon
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Copper Diffusion ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document