Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B[sub 2]H[sub 6], WF[sub 6], and NH[sub 3]

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

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Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

Chemistry of Materials ◽

10.1021/acs.chemmater.7b02098 ◽

2017 ◽

Vol 29 (15) ◽

pp. 6502-6510 ◽

Cited By ~ 9

Author(s):

Katja Väyrynen ◽

Kenichiro Mizohata ◽

Jyrki Räisänen ◽

Daniel Peeters ◽

Anjana Devi ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Tertiary Butyl ◽

Low Resistivity ◽

Layer Deposition

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A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition

Journal of Materials Chemistry ◽

10.1039/b610873c ◽

2007 ◽

Vol 17 (11) ◽

pp. 1109 ◽

Cited By ~ 19

Author(s):

Charles L. Dezelah ◽

Oussama M. El-Kadri ◽

Kaupo Kukli ◽

Kai Arstila ◽

Ronald J. Baird ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Tungsten Nitride ◽

Layer Deposition ◽

Low Valent

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High Density Remote Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films

ECS Meeting Abstracts ◽

10.1149/ma2005-01/15/705 ◽

2005 ◽

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

High Density ◽

Remote Plasma ◽

Layer Deposition

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Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor

Chemistry of Materials ◽

10.1021/cm021772s ◽

2003 ◽

Vol 15 (15) ◽

pp. 2969-2976 ◽

Cited By ~ 108

Author(s):

Jill S. Becker ◽

Seigi Suh ◽

Shenglong Wang ◽

Roy G. Gordon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Tungsten Nitride ◽

Layer Deposition

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Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

Journal of Materials Chemistry C ◽

10.1039/c6tc03606f ◽

2016 ◽

Vol 4 (47) ◽

pp. 11059-11066 ◽

Cited By ~ 20

Author(s):

Yong-Ping Wang ◽

Zi-Jun Ding ◽

Qi-Xuan Liu ◽

Wen-Jun Liu ◽

Shi-Jin Ding ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Low Resistivity ◽

Metal Precursor ◽

Post Annealing ◽

Layer Deposition

Oxygen-free and low resistivity nickel (Ni) thin films are successfully prepared by plasma-assisted atomic layer deposition using nickelocene (NiCp2) as a metal precursor and ammonia (NH3) as a reactant.

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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