Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications

2021 ◽  
Vol 3 (4) ◽  
pp. 1505-1529
Author(s):  
Jakub Jadwiszczak ◽  
Daniel J. Kelly ◽  
Junqing Guo ◽  
Yangbo Zhou ◽  
Hongzhou Zhang
Keyword(s):  
Plasma Treatment ◽  
Electronic Device ◽  
Layered Semiconductors ◽  
Device Applications

scholarly journals Topological electronics

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert
Keyword(s):  
Information Processing ◽  
Physical Properties ◽  
Materials Science ◽  
Electronic Device ◽  
Condensed Matter ◽  
Topological Phases ◽  
Applied Physics ◽  
New Paradigm ◽  
Topological Materials ◽  
Device Applications

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2019 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

scholarly journals Extreme electron polaron spatial delocalization in π-conjugated materials

2015 ◽  
Vol 112 (45) ◽  
pp. 13779-13783 ◽  
Author(s):  
Jeff Rawson ◽  
Paul J. Angiolillo ◽  
Michael J. Therien
Keyword(s):  
Performance Metrics ◽  
Electronic Device ◽  
Conjugated Materials ◽  
Light Emitting ◽  
Spin Resonance ◽  
Spatial Dimensions ◽  
Device Applications ◽  
Charge Transfer Reactions ◽  
Reorganization Energies ◽  
Electron Reduction

The electron polaron, a spin-1/2 excitation, is the fundamental negative charge carrier in π-conjugated organic materials. Large polaron spatial dimensions result from weak electron-lattice coupling and thus identify materials with unusually low barriers for the charge transfer reactions that are central to electronic device applications. Here we demonstrate electron polarons in π-conjugated multiporphyrin arrays that feature vast areal delocalization. This finding is evidenced by concurrent optical and electron spin resonance measurements, coupled with electronic structure calculations that suggest atypically small reorganization energies for one-electron reduction of these materials. Because the electron polaron dimension can be linked to key performance metrics in organic photovoltaics, light-emitting diodes, and a host of other devices, these findings identify conjugated materials with exceptional optical, electronic, and spintronic properties.

A New Approach Using Artificial Substrates for Growth of High-Quality Precipitate-Free HTS Thin Films, Toward Electronic Device Applications

2005 ◽  
Vol 868 ◽  
Author(s):  
K. Endo ◽  
P. Badica ◽  
H. Sato ◽  
H. Akoh
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Artificial Substrates ◽  
High Quality ◽  
New Approach ◽  
Mesa Structure ◽  
Device Applications ◽  
And Performance

AbstractHigh quality thin films of HTS have been grown by MOCVD on substrates with artificial steps of predefined height and width. The surface of the films grown on the steps having width equal to the ‘double of the migration length' of the atomic species depositing on the substrate is totally free of precipitates: precipitates are gathered at the step edges where the free energy is lowest. The method has several advantages: it is simple, universal (it is independent of the materials, substrates, deposition technique or application) and allows control of precipitates segregates so that the quality and growth conditions of the films are the same as for the films grown on conventional substrates. The method is expected to result in new opportunities for the device fabrication, design and performance. As an example we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown on (001) SrTiO3 single crystal substrates with artificial steps of 20 μm.

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