Color-Filter-Free Three-Layer-Stacked Image Sensor Using Blue/Green-Selective Organic Photoconductive Films with Thin-Film Transistor Circuits on CMOS Image Sensors

Author(s):  
Toshikatsu Sakai ◽  
Tomomi Takagi ◽  
Koki Imamura ◽  
Keitada Mineo ◽  
Hidenori Yakushiji ◽  
...  
2007 ◽  
Vol 989 ◽  
Author(s):  
William S. Wong ◽  
TseNga Ng ◽  
Michael L. Chabinyc ◽  
Rene A. Lujan ◽  
Raj B. Apte ◽  
...  

AbstractAmorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.


2014 ◽  
Vol 981 ◽  
pp. 310-314
Author(s):  
Chang Rui Zhao ◽  
Xiao Ming Chi ◽  
Zhen Yu Wang ◽  
Wei Yan ◽  
Dong Li

A new algorithm for removing pixel crosstalk in CMOS image sensors with Bayer color filter array was proposed. The algorithm can estimate low/high frequency image and provide adaptive threshold based on the human visual characteristics. By simulation experimentation on Macbeth color checker, resolution checker and real image, the experimental results revealed that this algorithm can remove the pixel crosstalk effectively.


Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5459
Author(s):  
Wei Deng ◽  
Eric R. Fossum

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.


1999 ◽  
Vol 20 (6) ◽  
pp. 289-291 ◽  
Author(s):  
H. Klauk ◽  
D.J. Gundlach ◽  
T.N. Jackson

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.


Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1329 ◽  
Author(s):  
Tomoya Nakamura ◽  
Keiichiro Kagawa ◽  
Shiho Torashima ◽  
Masahiro Yamaguchi

A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured. In this paper, we propose a lensless camera with a novel design that can capture the front and back sides simultaneously. The proposed camera is composed of multiple coded image sensors, which are complementary-metal-oxide-semiconductor (CMOS) image sensors in which air holes are randomly made at some pixels by drilling processing. When the sensors are placed facing each other, the object-side sensor works as a coding mask and the other works as a sparsified image sensor. The captured image is a sparse coded image, which can be decoded computationally by using compressive sensing-based image reconstruction. We verified the feasibility of the proposed lensless camera by simulations and experiments. The proposed thin lensless camera realized super-field-of-view imaging without lenses or coding masks and therefore can be used for rich information sensing in confined spaces. This work also suggests a new direction in the design of CMOS image sensors in the era of computational imaging.


2020 ◽  
Vol 2020 (7) ◽  
pp. 103-1-103-6
Author(s):  
Taesub Jung ◽  
Yonghun Kwon ◽  
Sungyoung Seo ◽  
Min-Sun Keel ◽  
Changkeun Lee ◽  
...  

An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.


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