Shape-Shifting via Salt Crystallization: Conversion of a Nanostructured Polymer into a Site-Selective Nitrogen-Doped Carbon Sheet with Enhanced Supercapacitive Performance

2020 ◽  
Vol 3 (6) ◽  
pp. 5984-5992 ◽  
Author(s):  
Partha Bairi ◽  
Kausik Sardar ◽  
Kausik Chanda ◽  
Madhupriya Samanta ◽  
Subhasish Thakur ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42043-42049
Author(s):  
Yosuke Ishii ◽  
Koki Ishigame ◽  
Yusuke Kido ◽  
Yuichiro Kato ◽  
Kengo Yamamoto ◽  
...  

Carbon fibers and sheets were prepared from jet-milled natural chitin and cellulose samples, and from natural lignin sample using ice-templating technique, respectively.


2020 ◽  
Vol 8 (17) ◽  
pp. 8383-8396 ◽  
Author(s):  
Taohong He ◽  
Xiaoshan Zeng ◽  
Shaopeng Rong

N atoms were selectively doped at substitutional or interstitial sites in the MnO2 lattice using N2 plasma. This research provides a site-selective N-doping method and a deep insight into the different effects of doping sites.


RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 44735-44742 ◽  
Author(s):  
Da Sol Jeong ◽  
Je Moon Yun ◽  
Kwang-Ho Kim

The highly porous nitrogen-doped carbon material pyrolyzed from one of PVP/NaOH mixtures with different NaOH contents exhibited a large specific surface area of up to 2400 m2 g−1 and an excellent supercapacitive performance of maximum 478 F g−1.


2017 ◽  
Vol 10 (8) ◽  
pp. 1777-1783 ◽  
Author(s):  
Li-Feng Chen ◽  
Yan Lu ◽  
Le Yu ◽  
Xiong Wen (David) Lou

Hollow particle-based N-doped carbon nanofibers synthesized via a facile electrospinning and carbonization method exhibit enhanced supercapacitive performance.


2020 ◽  
Vol 318 ◽  
pp. 114052
Author(s):  
Ijaz Hussain ◽  
Junwen Qi ◽  
Xiuyun Sun ◽  
Lianjun Wang ◽  
Jiansheng Li

2018 ◽  
Vol 816 ◽  
pp. 195-204 ◽  
Author(s):  
Nallal Muthuchamy ◽  
Raji Atchudan ◽  
Thomas Nesakumar Jebakumar Immanuel Edison ◽  
Suguna Perumal ◽  
Yong Rok Lee

2015 ◽  
Vol 27 (23) ◽  
pp. 3541-3545 ◽  
Author(s):  
Jin Zhao ◽  
Hongwei Lai ◽  
Zhiyang Lyu ◽  
Yufei Jiang ◽  
Ke Xie ◽  
...  

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.


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