Boron-Doped Graphene Directly Grown on Boron-Doped Diamond for High-Voltage Aqueous Supercapacitors

2019 ◽  
Vol 2 (2) ◽  
pp. 1526-1536 ◽  
Author(s):  
Dongdong Cui ◽  
Hongji Li ◽  
Mingji Li ◽  
Cuiping Li ◽  
Lirong Qian ◽  
...  
Keyword(s):  
High Voltage ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Doped Graphene

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2163-L2164 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Boron-doped graphene and boron-doped diamond electrodes: detection of biomarkers and resistance to fouling

The Analyst ◽  
2013 ◽  
Vol 138 (17) ◽  
pp. 4885 ◽  
Author(s):  
Shu Min Tan ◽  
Hwee Ling Poh ◽  
Zdeněk Sofer ◽  
Martin Pumera
Keyword(s):  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Doped Graphene ◽  
Detection Of Biomarkers

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode
Keyword(s):  
Aqueous Solutions ◽  
Boron Doped Diamond ◽  
Bdd Electrode ◽  
Boron Doped

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Polycrystalline boron-doped diamond-based electrochemical biosensor for simultaneous detection of dopamine and melatonin

2020 ◽  
Vol 1135 ◽  
pp. 73-82 ◽  
Author(s):  
Zhen Yang ◽  
Mingji Li ◽  
Hongji Li ◽  
Huayi Li ◽  
Cuiping Li ◽  
...  
Keyword(s):  
Electrochemical Biosensor ◽  
Simultaneous Detection ◽  
Boron Doped Diamond ◽  
Boron Doped

Simultaneous Square-Wave Voltammetric Determination of Paracetamol, Caffeine and Orphenadrine in Pharmaceutical Formulations Using a Cathodically Pretreated Boron-Doped Diamond Electrode

2013 ◽  
Vol 25 (7) ◽  
pp. 1734-1741 ◽  
Author(s):  
Ana Paula Pires Eisele ◽  
Débora Nóbile Clausen ◽  
César Ricardo Teixeira Tarley ◽  
Luiz Henrique Dall'Antonia ◽  
Elen Romão Sartori
Keyword(s):  
Pharmaceutical Formulations ◽  
Voltammetric Determination ◽  
Boron Doped Diamond ◽  
Square Wave ◽  
Diamond Electrode ◽  
Boron Doped ◽  
Boron Doped Diamond Electrode

scholarly journals Dislocation generation mechanisms in heavily boron-doped diamond epilayers

2021 ◽  
Vol 118 (5) ◽  
pp. 052108
Author(s):  
D. Araujo ◽  
F. Lloret ◽  
G. Alba ◽  
M. P. Alegre ◽  
M. P. Villar
Keyword(s):  
Boron Doped Diamond ◽  
Dislocation Generation ◽  
Boron Doped ◽  
Generation Mechanisms

Machinable boron-doped diamond as a practical heating element in multi-anvil apparatuses

2021 ◽  
Vol 92 (2) ◽  
pp. 023901
Author(s):  
Longjian Xie
Keyword(s):  
Heating Element ◽  
Boron Doped Diamond ◽  
Boron Doped
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