scholarly journals Variety of Ordered Patterns in Donor–Acceptor Polymer Semiconductor Films Crystallized from Solution

Author(s):  
Shunpu Li ◽  
Jin Li ◽  
Youngtea Chun ◽  
Pawan K. Shrestha ◽  
Xin Chang ◽  
...  
2016 ◽  
Vol 11 (19) ◽  
pp. 2725-2729 ◽  
Author(s):  
Zhiyuan Zhao ◽  
Hongtao Liu ◽  
Yan Zhao ◽  
Cheng Cheng ◽  
Jing Zhao ◽  
...  

2017 ◽  
Vol 5 (46) ◽  
pp. 12163-12171 ◽  
Author(s):  
Yinghui He ◽  
Jesse T. E. Quinn ◽  
Dongliang Hou ◽  
Jenner H.L. Ngai ◽  
Yuning Li

A novel small bandgap donor–acceptor polymer with a very small band gap of 0.95 eV shows promising photoresponse under near infrared light in phototransistors.


2003 ◽  
Author(s):  
Christopher J. Newsome ◽  
Takeo Kawase ◽  
Tatsuya Shimoda ◽  
David J. Brennan

2013 ◽  
Vol 46 (18) ◽  
pp. 7325-7331 ◽  
Author(s):  
Christian Müller ◽  
L. Mattias Andersson ◽  
Ovidio Peña-Rodríguez ◽  
Miquel Garriga ◽  
Olle Inganäs ◽  
...  

2021 ◽  
Vol 57 (28) ◽  
pp. 3464-3467
Author(s):  
Ben Yang ◽  
Shiqi Zhang ◽  
Yan Wang ◽  
Shilei Dai ◽  
Xin Wang ◽  
...  

A broad range of conjugated 2D organic polymer semiconductor films were prepared, and we utilized the resulting OFET devices to monitor lithium-ion batterie leakage.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Basanagouda. B. Patil ◽  
Yasunori Takeda ◽  
Subhash Singh ◽  
Tony Wang ◽  
Amandeep Singh ◽  
...  

AbstractWe successfully demonstrated a detailed and systematic enhancement of organic field effect transistors (OFETs) performance using dithienothiophene (DTT) and furan-flanked diketopyrrolopyrrole based donor–acceptor conjugated polymer semiconductor namely PDPPF-DTT as an active semiconductor. The self-assembled monolayers (SAMs) treatments at interface junctions of the semiconductor–dielectric and at the semiconductor–metal electrodes has been implemented using bottom gate bottom contact device geometry. Due to SAM treatment at the interface using tailored approach, the significant reduction of threshold voltage (Vth) from − 15.42 to + 5.74 V has been observed. In addition to tuning effect of Vth, simultaneously charge carrier mobility (µFET) has been also enhanced the from 9.94 × 10−4 cm2/Vs to 0.18 cm2/Vs. In order to calculate the trap density in each OFET device, the hysteresis in transfer characteristics has been studied in detail for bare and SAM treated devices. Higher trap density in Penta-fluoro-benzene-thiol (PFBT) treated OFET devices enhances the gate field, which in turn controls the charge carrier density in the channel, and hence gives lower Vth = + 5.74 V. Also, PFBT treatment enhances the trapped interface electrons, which helps to enhance the mobility in this OFET architecture. The overall effect has led to possibility of reduction in the Vth with simultaneous enhancements of µFET in OFETs, following systematic device engineering methodology.


2015 ◽  
Vol 7 (48) ◽  
pp. 26726-26734 ◽  
Author(s):  
Xiao Xue ◽  
George Chandler ◽  
Xinran Zhang ◽  
R. Joseph Kline ◽  
Zhuping Fei ◽  
...  

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