Solid Electrolyte Interphase Layer Formation during Lithiation of Single-Crystal Silicon Electrodes with a Protective Aluminum Oxide Coating

2021 ◽  
Author(s):  
Arne Ronneburg ◽  
Luca Silvi ◽  
Joshaniel Cooper ◽  
Karsten Harbauer ◽  
Matthias Ballauff ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Single Crystal ◽  
Solid Electrolyte ◽  
Solid Electrolyte Interphase ◽  
Single Crystal Silicon ◽  
Oxide Coating ◽  
Interphase Layer ◽  
Layer Formation ◽  
Crystal Silicon

Mesoscale Elucidation of Solid Electrolyte Interphase Layer Formation in Li-Ion Battery Anode

2017 ◽  
Vol 121 (47) ◽  
pp. 26233-26240 ◽  
Author(s):  
Feng Hao ◽  
Zhixiao Liu ◽  
Perla B. Balbuena ◽  
Partha P. Mukherjee
Keyword(s):  
Solid Electrolyte ◽  
Solid Electrolyte Interphase ◽  
Interphase Layer ◽  
Li Ion Battery ◽  
Layer Formation ◽  
Li Ion ◽  
Battery Anode

scholarly journals Quantifying capacity loss due to solid-electrolyte-interphase layer formation on silicon negative electrodes in lithium-ion batteries

2012 ◽  
Vol 215 ◽  
pp. 145-151 ◽  
Author(s):  
Siva P.V. Nadimpalli ◽  
Vijay A. Sethuraman ◽  
Swapnil Dalavi ◽  
Brett Lucht ◽  
Michael J. Chon ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Lithium Ion Batteries ◽  
Solid Electrolyte Interphase ◽  
Lithium Ion ◽  
Interphase Layer ◽  
Layer Formation ◽  
Capacity Loss ◽  
Negative Electrodes

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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