Enhancing Thermoelectric Performance of Yb0.3Co4Sb12 by Synergistically Optimized Carrier Concentration and Ionized Impurity Scattering

2021 ◽  
Author(s):  
Wei Wang ◽  
Jianbo Zhu ◽  
Dandan Qin ◽  
Wenjing Shi ◽  
Songting Cai ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Impurity Scattering ◽  
Thermoelectric Performance ◽  
Ionized Impurity Scattering

The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO:Al Thin Films Deposited by Magnetron Sputtering

2017 ◽  
Vol 727 ◽  
pp. 938-941
Author(s):  
Xiao Jing Wang ◽  
Yun Zhang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Impurity Scattering ◽  
Flexible Substrates ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Ionized Impurity Scattering

ZnO:Al thin films were deposited on flexible substrates by magnetron sputtering. The effects of the carrier concentrations on the hall mobilities of AZO films were investigated. When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment. When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.

Electrical Conduction Mechanism of Highly Transparent and Conductive ZnO Thin Films

2001 ◽  
Vol 666 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shingo Suzuki ◽  
Toshihiro Miyata
Keyword(s):  
Electrical Conductivity ◽  
Carrier Concentration ◽  
Conduction Band ◽  
Conduction Mechanism ◽  
Impurity Scattering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Boundary Scattering ◽  
Ionized Impurity Scattering ◽  
Transparent Conducting

ABSTRACTIn this paper, we describe the underlying theory along with experiments concerning the electrical conductivity of transparent conducting ZnO films with a carrier concentration of 1019-1021 cm−3. The experimentally determined mobility as a function of carrier concentration in the range of 1019-1021 cm−3 could be quantitatively referenced to a theoretically calculated mobility that is dominated by not only grain boundary scattering but also ionized impurity scattering using the Brooks-Herring-Dingle theory with both degeneracy and nonparabolicity of the conduction band taken into account. Concerning nonparabolicity, the conduction band effective mass as a function of carrier concentration was theoretically analyzed and experimentally determined.

scholarly journals Metallic n‐Type Mg 3 Sb 2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

2020 ◽  
Vol 32 (16) ◽  
pp. 1908218 ◽  
Author(s):  
Kazuki Imasato ◽  
Chenguang Fu ◽  
Yu Pan ◽  
Max Wood ◽  
Jimmy Jiahong Kuo ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Scattering ◽  
Thermoelectric Performance ◽  
Ionized Impurity Scattering

scholarly journals Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  
Keyword(s):  
Power Factor ◽  
Carrier Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Substantial Improvement ◽  
Thermoelectric Performance ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Ionized Impurity Scattering ◽  
Higher Carrier Mobility

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Thermoelectric Performance of Cr Doped and Cr–Fe Double-Doped Higher Manganese Silicides with Adjusted Carrier Concentration and Significant Electron–Phonon Interaction

2021 ◽  
Vol 13 (7) ◽  
pp. 8574-8583
Author(s):  
Quansheng Guo ◽  
Wenhao Zhang ◽  
Zihang Liu ◽  
Xiuwei Fu ◽  
Sylvain Le Tonquesse ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Phonon Interaction ◽  
Higher Manganese Silicides ◽  
Electron Phonon Interaction

Ionized Impurity Scattering in Degenerate Many-Valley Semiconductors

1964 ◽  
Vol 135 (3A) ◽  
pp. A779-A784 ◽  
Author(s):  
John E. Robinson ◽  
Sergio Rodriguez
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

Ionized impurity scattering in semiconductors: InSb doped by neutron irradiation

1976 ◽  
Vol 9 (17) ◽  
pp. 3165-3171 ◽  
Author(s):  
F Kuchar ◽  
E Fantner ◽  
K Hess
Keyword(s):  
Neutron Irradiation ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

Phase-shift calculation of ionized impurity scattering in semiconductors

1981 ◽  
Vol 23 (10) ◽  
pp. 5413-5427 ◽  
Author(s):  
J. R. Meyer ◽  
F. J. Bartoli
Keyword(s):  
Phase Shift ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Shift Calculation

scholarly journals Enhancement of Thermoelectric Performance in CuSbSe 2 Nanoplate‐Based Pellets by Texture Engineering and Carrier Concentration Optimization

Small ◽  
2018 ◽  
Vol 14 (50) ◽  
pp. 1803092 ◽  
Author(s):  
Yubo Luo ◽  
Chengfeng Du ◽  
Qinghua Liang ◽  
Yun Zheng ◽  
Beibei Zhu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance
Sign in / Sign up

Export Citation Format

Share Document