Electrical Conduction Mechanism of Highly Transparent and Conductive ZnO Thin Films

2001 ◽  
Vol 666 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shingo Suzuki ◽  
Toshihiro Miyata
Keyword(s):  
Electrical Conductivity ◽  
Carrier Concentration ◽  
Conduction Band ◽  
Conduction Mechanism ◽  
Impurity Scattering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Boundary Scattering ◽  
Ionized Impurity Scattering ◽  
Transparent Conducting

ABSTRACTIn this paper, we describe the underlying theory along with experiments concerning the electrical conductivity of transparent conducting ZnO films with a carrier concentration of 1019-1021 cm−3. The experimentally determined mobility as a function of carrier concentration in the range of 1019-1021 cm−3 could be quantitatively referenced to a theoretically calculated mobility that is dominated by not only grain boundary scattering but also ionized impurity scattering using the Brooks-Herring-Dingle theory with both degeneracy and nonparabolicity of the conduction band taken into account. Concerning nonparabolicity, the conduction band effective mass as a function of carrier concentration was theoretically analyzed and experimentally determined.

The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO:Al Thin Films Deposited by Magnetron Sputtering

2017 ◽  
Vol 727 ◽  
pp. 938-941
Author(s):  
Xiao Jing Wang ◽  
Yun Zhang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Impurity Scattering ◽  
Flexible Substrates ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Ionized Impurity Scattering

ZnO:Al thin films were deposited on flexible substrates by magnetron sputtering. The effects of the carrier concentrations on the hall mobilities of AZO films were investigated. When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment. When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.

scholarly journals Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

2016 ◽  
Vol 4 (1) ◽  
Author(s):  
R. Radha ◽  
A. Sakthivelu ◽  
D. Pradhabhan
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Dopant Concentration ◽  
Blue Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Mo Doping ◽  
Doped Zno

<em>Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration. </em>

Doubling the ZT record of TiS2-based thermoelectrics by incorporation of ionized impurity scattering

2018 ◽  
Vol 6 (35) ◽  
pp. 9345-9353 ◽  
Author(s):  
Yifeng Wang ◽  
Lin Pan ◽  
Chao Li ◽  
Ruoming Tian ◽  
Rong Huang ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
New Record ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

TiS2–xAgSnSe2 composites showed an ionized impurity scattering as indicated by the growth of exponent m in electrical conductivity σ ∝Tm (400–580 K), which favored a new record ZTmax ∼ 0.8 for TiS2-based TEs.

Decrease in Work Function of Transparent Conducting ZnO Thin Films by Phosphorus Ion Implantation

2008 ◽  
Vol 8 (9) ◽  
pp. 4877-4880 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Oxygen Vacancies ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
Visible Wavelength Range

To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

Fabrication of Ti-Doped ZnO Thin Films by Chemical Bath Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 2254-2258 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Wen Shiush Chen ◽  
Chun Hung Lai ◽  
Shu Fong Yan
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Chemical Bath Deposition ◽  
Treatment Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
Thermal Treatments ◽  
Structural And Electrical Properties ◽  
Crystallite Structure ◽  
Doped Zno

Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 2.5×1020cm-3, a resistivity of 2.8×10-3Ω-cm, and a mobility of 12 cm2/Vs.

CHARGE TRANSPORT IN GERMANIUM-SUBSTITUTED MAGNESIUM FERRITES

1994 ◽  
Vol 08 (16) ◽  
pp. 947-958 ◽  
Author(s):  
MD. ABDUL MALIK ◽  
V. D. REDDY ◽  
P. VENUGOPAL REDDY ◽  
D. R. SAGAR ◽  
PRANKISHAN
Keyword(s):  
Electrical Conductivity ◽  
Charge Carrier ◽  
Seebeck Coefficient ◽  
Charge Transport ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Conduction Mechanism ◽  
Charge Carrier Mobility ◽  
Charge Carrier Concentration ◽  
Experimental Values

Electrical conductivity (σ) and thermopower measurements have been carried out on some Mg 1+x Ge x Fe 2−2x O 4 (0 < x < 0.4) ferrite samples over a temperature range 300–700 K. Using the experimental values of Seebeck coefficient at various temperatures, the values of charge carrier concentration have been determined. On the basis of the temperature variation of charge carrier mobility, the conduction mechanism in these ferrites has been discussed.

Electrodeposition of ZnO Thin Films on a Flexible Conductive Substrates

2014 ◽  
Vol 986-987 ◽  
pp. 63-66
Author(s):  
He Wang ◽  
Yong Jian Chen ◽  
Feng Xu ◽  
Hai Ning Cui ◽  
Bernabé Marí ◽  
...  
Keyword(s):  
Transparent Conducting Oxides ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrodeposition Technique ◽  
Surface Layers ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Conductive Substrates ◽  
Modified Surface ◽  
Complex Film

Since transparent conducting oxides can be as a buttom layer of complex film electrodes, electrodeposition technique may produce ZnO films depending on variety conditions and modified surface layers of substrates in electrochemical procedures. Here we invested the structure and morphologies of ZnO films by using modified surface of the substrate-ZnO/ITO/polymer-PEN and ZnO doped Ga/ ITO/polymer-PEN.

Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition

2010 ◽  
Vol 150-151 ◽  
pp. 252-256 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Shu Fong Yan ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Chemical Bath Deposition ◽  
Treatment Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
Thermal Treatments ◽  
Structural And Electrical Properties ◽  
Crystallite Structure ◽  
Doped Zno

Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 1.3×1020 cm-3, a resistivity of 3×10-3 Ω-cm, and a mobility of 15 cm2/Vs.

Modulation of Physical Properties of Sprayed ZnO Thin Films by Substrate Temperature for Optical Applications

2016 ◽  
Vol 15 (01n02) ◽  
pp. 1650007
Author(s):  
Mohamed Othmane ◽  
Abdallah Attaf ◽  
Hanane Saidi ◽  
Fouad Bouaichi ◽  
Nadia Lehraki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Substrate Temperature ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Bandgap Energy

We investigated the structural, electrical and optical properties of zinc oxide thin films as the n-type semiconductor. In the present paper, the effect of substrate temperature on the synthesis of ZnO thin films was carried out from 250[Formula: see text]C to 500[Formula: see text]C. ZnO thin films were deposited on glass substrates via ultrasonic spray technique with 0.2[Formula: see text]mol/L of zinc acetate dehydrate. The crystal quality of the thin films was analyzed by X-ray diffraction which results in modified substrate temperature. The optical transmittance and electrical conductivity measurements were carried out by Ultraviolet-visible spectrophotometer and four-point methods, respectively. Polycrystalline films with a hexagonal wurtzite structure with (100) and (002) preferential orientation corresponding to ZnO films were observed at high temperature. The optimal values of the average crystallite size of the ZnO films under consideration are observed beginning with 350[Formula: see text]C of substrate temperature. All films exhibit an average optical transparency of about 85% in the visible region. The shift of optical transmittance toward higher wavelength can be shown by the increase of bandgap energy from 3.245[Formula: see text]eV to 3.281[Formula: see text]eV with increasing substrate temperature of 250–500[Formula: see text]C. The observed Urbach energy of ZnO thin films decreases from 0.11311[Formula: see text]eV to 0.04974[Formula: see text]eV. At a high temperature, the electrical conductivity of ZnO films was increased from [Formula: see text] to 41.58 ([Formula: see text].cm)[Formula: see text] with the increasing substrate temperature from 350[Formula: see text]C to 500[Formula: see text]C.

Sign in / Sign up

Export Citation Format

Share Document