Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays

2021 ◽  
Author(s):  
Youngin Goh ◽  
Junghyeon Hwang ◽  
Minki Kim ◽  
Yongsun Lee ◽  
Minhyun Jung ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
High Density ◽  
Cross Point ◽  
Stress Engineering

Design trade-offs for high density cross-point resistive memory

2012 ◽  
Author(s):  
Dimin Niu ◽  
Cong Xu ◽  
Naveen Muralimanohar ◽  
Norman P. Jouppi ◽  
Yuan Xie
Keyword(s):  
High Density ◽  
Resistive Memory ◽  
Cross Point ◽  
Trade Offs

scholarly journals Low-resistance spin-dependent tunnel junctions with HfAlO/sub x/ barriers for high-density recording-head application

2002 ◽  
Vol 38 (5) ◽  
pp. 2703-2705 ◽  
Author(s):  
Jianguo Wang ◽  
P.P. Freitas ◽  
E. Snoeck ◽  
X. Batlle ◽  
J. Cuadra
Keyword(s):  
Tunnel Junctions ◽  
High Density ◽  
Recording Head ◽  
Low Resistance ◽  
High Density Recording

Switching and reliability issues of magnetic tunnel junctions for high-density memory device

2006 ◽  
Vol 6 ◽  
pp. e86-e91 ◽  
Author(s):  
Kwang-Seok Kim ◽  
B.K. Cho ◽  
T.W. Kim
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Device ◽  
High Density

Thermally Stable Magnetic Tunnel Junctions for High Density MRAM

2004 ◽  
Author(s):  
S. Ikegawa ◽  
N. Ishiwata ◽  
M. Nagamine ◽  
T. Nagase ◽  
K. Nishiyama ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Density ◽  
Thermally Stable

MIM-type cell selector for high-density and low-power cross-point memory application

2012 ◽  
Vol 93 ◽  
pp. 81-84 ◽  
Author(s):  
Jungho Shin ◽  
Godeuni Choi ◽  
Jiyong Woo ◽  
Jubong Park ◽  
Sangsu Park ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
Cross Point

scholarly journals Highly Reliable Memory Operation of High Density Three-Terminal Thyristor Random Access Memory

2021 ◽  
Author(s):  
Hyangwoo Kim ◽  
Hyeonsu Cho ◽  
Hyeon-Tak Kwak ◽  
Myunghae Seo ◽  
Seungho Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Data Retention ◽  
Access Memory ◽  
Cathode Voltage ◽  
Cross Point ◽  
Memory Array ◽  
Retention Characteristics ◽  
Power Operation

Abstract Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode- cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.6 V shows the continuous data retention capability without refresh operation with a low standby current of 1.14 pA. In addition, a memory array operation scheme of 3-T TRAM is proposed to address array disturbance issues. The presented array operation scheme can efficiently minimize program, erase and read disturbances on unselected cells by adjusting gate-cathode voltage. The standby voltage turns out to be beneficial to improve retention characteristics: over 10 s. With the proposed memory array operation, 3-T TRAM can provide excellent data retention characteristics and high-density memory configurations comparable with or surpass conventional dynamic random-access memory (DRAM) technology.

1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays

2015 ◽  
Vol 62 (7) ◽  
pp. 2197-2204 ◽  
Author(s):  
Chiyui Ahn ◽  
Zizhen Jiang ◽  
Chi-Shuen Lee ◽  
Hong-Yu Chen ◽  
Jiale Liang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Density ◽  
Cross Point ◽  
Memory Arrays ◽  
Carbon Nanotube Fets
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