Facile Synthesis of Co9Se8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device

2016 ◽  
Vol 8 (44) ◽  
pp. 30336-30343 ◽  
Author(s):  
Peng Zhang ◽  
Benhua Xu ◽  
Cunxu Gao ◽  
Guilin Chen ◽  
Meizhen Gao
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Memory Device ◽  
Facile Synthesis ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

2019 ◽  
Vol 114 (18) ◽  
pp. 181103 ◽  
Author(s):  
Zhiliang Chen ◽  
Yating Zhang ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
Yongli Che ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Perovskite Quantum Dots ◽  
Switching Memory
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