1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

2017 ◽  
Vol 9 (9) ◽  
pp. 8187-8193 ◽  
Author(s):  
Changyin Ji ◽  
Min Lu ◽  
Hua Wu ◽  
Xiaoyu Zhang ◽  
Xinyu Shen ◽  
...  
2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.


Nanoscale ◽  
2019 ◽  
Vol 11 (12) ◽  
pp. 5231-5239 ◽  
Author(s):  
Fengtian Xia ◽  
Xiao Wei Sun ◽  
Shuming Chen

Highly bright alternating-current (AC) driven quantum-dot light-emitting diodes (QLEDs) are demonstrated based on a single dielectric layer structure.


ACS Nano ◽  
2020 ◽  
Vol 14 (12) ◽  
pp. 17496-17504
Author(s):  
Seunghyun Rhee ◽  
Jun Hyuk Chang ◽  
Donghyo Hahm ◽  
Byeong Guk Jeong ◽  
Jaeyoul Kim ◽  
...  

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qiang Su ◽  
Heng Zhang ◽  
Shuming Chen

AbstractTandem quantum-dot light-emitting diodes (QLEDs) with multiple QLED elements vertically connected by the intermediate electrodes offer the advantages of high brightness and long lifetime. However, it is challenging to individually address each QLED element in conventional tandem structures. To address this challenge, here, transparent QLEDs built on flexible plastic substrates are developed as the building blocks for the tandem QLEDs. By vertically integrating a red, a green, and a blue transparent QLEDs with an ultraviolet glue, the resultant tandem QLED can emit separately controllable red/green/blue (R/G/B) emission with an external quantum efficiency (EQE) of 12.0%/8.5%/4.5%, respectively. Enabled by the transparent and extractable IZO electrodes, the QLED elements can also be connected in series or in parallel with an EQE of 24.8% or 8.2%, respectively. Our work provides a new implementation strategy for the realization of tandem QLEDs with individually addressable R/G/B emission for both display and lighting applications.


2019 ◽  
Vol 8 (2) ◽  
pp. 1901145 ◽  
Author(s):  
Xinyu Li ◽  
Qingli Lin ◽  
Jiaojiao Song ◽  
Huaibin Shen ◽  
Huimin Zhang ◽  
...  

2021 ◽  
Author(s):  
Guohang Ba ◽  
Qiulei Xu ◽  
Xinyu Li ◽  
Qingli Lin ◽  
Huaibin Shen ◽  
...  

2019 ◽  
Vol 13 (3) ◽  
pp. 192-197 ◽  
Author(s):  
Huaibin Shen ◽  
Qiang Gao ◽  
Yanbin Zhang ◽  
Yue Lin ◽  
Qingli Lin ◽  
...  

Nanomaterials ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 154
Author(s):  
Ming-Ru Wen ◽  
Sheng-Hsiung Yang ◽  
Wei-Sheng Chen

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.


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