Inverted quantum-dot light emitting diodes with cesium carbonate doped aluminium-zinc-oxide as the cathode buffer layer for high brightness

2013 ◽  
Vol 1 (25) ◽  
pp. 3924 ◽  
Author(s):  
Hyo-Min Kim ◽  
Abd. Rashid bin Mohd Yusoff ◽  
Jun-Ho Youn ◽  
Jin Jang
Keyword(s):  
Zinc Oxide ◽  
Quantum Dot ◽  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Cesium Carbonate ◽  
High Brightness ◽  
Light Emitting ◽  
Cathode Buffer Layer

Partially pyridine-functionalized quantum dots for efficient red, green, and blue light-emitting diodes

2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting ◽  
Turn On ◽  
Colloidal Quantum Dot

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

2017 ◽  
Vol 9 (9) ◽  
pp. 8187-8193 ◽  
Author(s):  
Changyin Ji ◽  
Min Lu ◽  
Hua Wu ◽  
Xiaoyu Zhang ◽  
Xinyu Shen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting

Organic-Oxide Cathode Buffer Layer in Fabricating High-Performance Polymer Light-Emitting Diodes

2008 ◽  
Vol 18 (19) ◽  
pp. 3036-3042 ◽  
Author(s):  
Tsung-Hsun Lee ◽  
Jung-Chun-Andrew Huang ◽  
Georgi L'vovich Pakhomov ◽  
Tzung-Fang Guo ◽  
Ten-Chin Wen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Oxide Cathode ◽  
High Performance Polymer ◽  
Polymer Light Emitting Diodes ◽  
Cathode Buffer Layer

Transparent InP Quantum Dot Light-Emitting Diodes with ZrO2Electron Transport Layer and Indium Zinc Oxide Top Electrode

2016 ◽  
Vol 26 (20) ◽  
pp. 3454-3461 ◽  
Author(s):  
Hee Yeon Kim ◽  
Yu Jin Park ◽  
Jiwan Kim ◽  
Chul Jong Han ◽  
Jeongno Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Light Emitting ◽  
Indium Zinc Oxide

Alternating-current driven quantum-dot light-emitting diodes with high brightness

Nanoscale ◽  
2019 ◽  
Vol 11 (12) ◽  
pp. 5231-5239 ◽  
Author(s):  
Fengtian Xia ◽  
Xiao Wei Sun ◽  
Shuming Chen
Keyword(s):  
Quantum Dot ◽  
Dielectric Layer ◽  
Light Emitting Diodes ◽  
Layer Structure ◽  
Alternating Current ◽  
High Brightness ◽  
Light Emitting

Highly bright alternating-current (AC) driven quantum-dot light-emitting diodes (QLEDs) are demonstrated based on a single dielectric layer structure.

Admittance Spectroscopic Analysis of Polymer Light Emitting Diodes with the LiF Cathode Buffer Layer

2006 ◽  
Vol 459 (1) ◽  
pp. 11/[291]-18/[298]
Author(s):  
H. M. Kim ◽  
U. Manna ◽  
K. S. Jang ◽  
J. Yi ◽  
Sunyoung Sohn ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Spectroscopic Analysis ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes ◽  
Cathode Buffer Layer

Effects of a Nanothin Al2O3 Cathode Buffer Layer on the Characteristics of Organic Light-emitting Diodes with Sputter-deposited Cathodes

2002 ◽  
Vol 17 (6) ◽  
pp. 1248-1250 ◽  
Author(s):  
Samil Kho ◽  
Sungjun Bae ◽  
Donggeun Jung
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Performance Degradation ◽  
Hole Transport ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Light Emitting ◽  
Organic Light ◽  
Cathode Buffer Layer ◽  
Sputter Deposited

Effects of an Al2O3 nanothin film between the emitting layer and the sputterdeposited cathode were studied for organic light-emitting diodes (OLEDs) with indium–tin–oxide, NN′-dephenyl-NN′-bis)(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine, tris(8-hydroxyquinoline)aluminum (Alq3), and aluminum (Al) as an anode, a hole transport layer, an emitting layer (EML), and a cathode, respectively. The performance of the OLEDs with sputter-deposited Al cathodes was inferior to that of the OLED with the evaporated Al cathode. However, the insertion of an Al2O3 nanothin film with a proper thickness between the EML and the sputter-deposited Al cathode was effective to alleviate performance degradation of the OLEDs with sputter-deposited Al cathodes in current flow and light emission. It is considered that both protection of EML by Al2O3 from the sputtering damage and higher luminance by the presence of a thin insulating layer between the EML and the cathode alleviated performance degradation of the OLED with an Al2O3 cathode buffer layer. The Al2O3 buffer layer could not alleviate quantum efficiency reduction caused by the sputtering damage.

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