High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors

2017 ◽  
Vol 9 (12) ◽  
pp. 10897-10903 ◽  
Author(s):  
Keenan N. Woods ◽  
Tsung-Han Chiang ◽  
Paul N. Plassmeyer ◽  
Matthew G. Kast ◽  
Alexander C. Lygo ◽  
...  

2015 ◽  
Vol 7 (3) ◽  
pp. 1678-1684 ◽  
Author(s):  
Paul N. Plassmeyer ◽  
Kevin Archila ◽  
John F. Wager ◽  
Catherine J. Page


RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.





1992 ◽  
Vol 279 (3) ◽  
pp. A112
Author(s):  
K. Takeuchi ◽  
M. Salmeron ◽  
G.A. Somorjai


2012 ◽  
Vol 239-240 ◽  
pp. 1585-1588 ◽  
Author(s):  
Yuh Chung Hu ◽  
David T.W. Lin ◽  
Hai Lin Lee ◽  
Pei Zen Chang

The effect of Zinc-Oxide (ZnO) thin film annealed in different ambiences is presented. To achieve low cost and environmentally friendly process, ZnO aqueous solution is synthesized by dissolving zinc acetate dihydrate in deionized water directly. Zinc oxide aqueous solution of high solubility and stability is presented. High quality and dense Zinc oxide thin film is formed by spin coating. Annealing temperatures are in the range of 300 °C~500 °C, and annealing ambiences of both air and N2 are discussed.



RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51440-51445 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Enhanced performance of solution-processed IZO-TFTs with ZrOx interlayer due to Al diffusion suppression.



2011 ◽  
Vol 50 (7R) ◽  
pp. 070201 ◽  
Author(s):  
Jee Ho Park ◽  
Won Jin Choi ◽  
Jin Young Oh ◽  
Soo Sang Chae ◽  
Woo Soon Jang ◽  
...  


2012 ◽  
Vol 2 (1) ◽  
pp. 17-22 ◽  
Author(s):  
Jun-Hyuck Jeon ◽  
Young Hwan Hwang ◽  
JungHo Jin ◽  
Byeong-Soo Bae

Abstract



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