A Solution Processed ZnO Thin Film

The effect of Zinc-Oxide (ZnO) thin film annealed in different ambiences is presented. To achieve low cost and environmentally friendly process, ZnO aqueous solution is synthesized by dissolving zinc acetate dihydrate in deionized water directly. Zinc oxide aqueous solution of high solubility and stability is presented. High quality and dense Zinc oxide thin film is formed by spin coating. Annealing temperatures are in the range of 300 °C~500 °C, and annealing ambiences of both air and N2 are discussed.

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Transistor Characteristics of Zinc Oxide Active Layers at Various Zinc Acetate Dihydrate Solution Concentrations of Zinc Oxide Thin-film

Journal of Applied Research and Technology ◽

10.1016/j.jart.2015.06.003 ◽

2015 ◽

Vol 13 (2) ◽

pp. 291-296 ◽

Cited By ~ 8

Author(s):

H.C. You

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Zinc Acetate ◽

Zinc Acetate Dihydrate ◽

Oxide Thin Film ◽

Acetate Dihydrate ◽

Zinc Oxide Thin Film ◽

Active Layers

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Zinc Oxide Thin Film Morphology as Function of Substrate Position During Sputtering Process

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.900.103 ◽

2021 ◽

Vol 900 ◽

pp. 103-111

Author(s):

Christelle Habis ◽

Jean Zaraket ◽

Michel Aillerie

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Cost ◽

Linear Increase ◽

Oxide Thin Film ◽

Central Position ◽

Zinc Oxide Thin Film ◽

Force Microscopy ◽

Atomic Force ◽

Great Transparency

Transparent conductive oxides are materials combining great transparency with high conductivity. In photovoltaic applications, they are developed under thin layer for the realization of upper electrodes of solar cells. Among transparent oxide materials, Zinc Oxide (ZnO) presents unique properties, starting with its first qualities to be abundant, low-cost and non-toxic oxide. Zinc Oxide thin film was deposited on rectangular glass substrate by magnetron sputtering. After an overview of the properties expected for good transparent conductive materials, the effect of distance from the center of the cell on the morphology of the film was investigated by Atomic Force Microscopy (AFM). The scanning was done on different area of the sample as function of the distance from the central position of the direct sputtering jet. As far as the distance increased, it has been noticed a quasi-linear increase in thickness of the ZnO deposited film and a change in the grain shape from spherical to pyramidal with an increase in the size of the particles. Controlling the sputtering distance allows the control of texture, thus of the Haze factor, the photo-generation of excitons, as well the optical transmission of the TCO layer and finally an improvement in the efficiency of the so-built photovoltaic cells.

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Contact Resistances Between Low-Cost Electrode Materials and Gallium Indium Zinc Oxide Thin-Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2009-02/31/2381 ◽

2009 ◽

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Electrode Materials ◽

Low Cost ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide

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High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

ACS Applied Materials & Interfaces ◽

10.1021/am404490t ◽

2013 ◽

Vol 5 (23) ◽

pp. 12262-12267 ◽

Cited By ~ 27

Author(s):

Jae Chul Park ◽

Seung-Eon Ahn ◽

Ho-Nyeon Lee

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Low Cost ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide

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Diode Characteristics of Zinc Oxide Thin Film at Different Deposition Time for FET Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.393 ◽

2013 ◽

Vol 667 ◽

pp. 393-396

Author(s):

M. Salina ◽

Mohd Zainizan Sahdan ◽

N.A. Yusoff ◽

U.M. Noor ◽

Mohamad Rusop

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Deposition Time ◽

Chemical Vapor ◽

Oxide Thin Film ◽

Zno Thin Film ◽

Zinc Oxide Thin Film ◽

Thermal Chemical Vapor Deposition ◽

Interesting Compound ◽

Zno Powder

Zinc oxide (ZnO) is a one of the most interesting compound semiconductors that received more attention during last few years due to its unique properties. Due to that, this study has been done to manipulate those properties to be used for FET applications. The ZnO thin film has been deposited using the thermal chemical vapor deposition. This is done in a double furnace, which vapored the ZnO powder at different temperature. The growth of the ZnO thin film has been observed using SEM and the electrical properties has been analyzed by using I-V probe station. This is done to study the diode characteristics of ZnO thin film to be used in FET applications.

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