Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures

2018 ◽  
Vol 10 (11) ◽  
pp. 9802-9816 ◽  
Author(s):  
Handan Yildirim ◽  
Ruth Pachter
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Conductive Filament ◽  
Metal Structures ◽  
Mechanistic Analysis

Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory

2017 ◽  
Author(s):  
Francesco Maria Puglisi ◽  
Umberto Celano ◽  
Andrea Padovani ◽  
Wilfried Vandervorst ◽  
Luca Larcher ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Conductive Filament

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

2020 ◽  
Vol 2 (10) ◽  
pp. 3160-3170
Author(s):  
Desmond J. J. Loy ◽  
Putu A. Dananjaya ◽  
Somsubhra Chakrabarti ◽  
Kuan Hong Tan ◽  
Samuel C. W. Chow ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Density Dependence ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Hopping Conduction ◽  
Access Memory ◽  
Vacancy Density

First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

2014 ◽  
Vol 23 (12) ◽  
pp. 127301
Author(s):  
Jing Zhao ◽  
Jing-Yu Dong ◽  
Shu-Xia Ren ◽  
Li-Yong Zhang ◽  
Xu Zhao ◽  
...  
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Conductive Filament ◽  
First Principles Study

scholarly journals Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Hangbing Lv ◽  
Xiaoxin Xu ◽  
Hongtao Liu ◽  
Ruoyu Liu ◽  
Qi Liu ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Conductive Filament ◽  
Oxide Electrolyte

DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

2013 ◽  
Vol 107 ◽  
pp. 1-5 ◽  
Author(s):  
V. Maccaronio ◽  
F. Crupi ◽  
L.M. Procel ◽  
L. Goux ◽  
E. Simoen ◽  
...  
Keyword(s):  
Random Access ◽  
Low Frequency ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Access Memory ◽  
Conductive Filament

scholarly journals Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study

2016 ◽  
Vol 65 (7) ◽  
pp. 073101
Author(s):  
Dai Yue-Hua ◽  
Pan Zhi-Yong ◽  
Chen Zhen ◽  
Wang Fei-Fei ◽  
Li Ning ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Conductive Filament ◽  
First Principles Study
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