Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

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Stochastic Filament Formation on the Cycling Endurance of Backfilled Contact Resistive Random Access Memory Cells

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2019.8804707 ◽

2019 ◽

Cited By ~ 1

Author(s):

Yun-Feng Kao ◽

Chrong Jung Lin ◽

Ya-Chin King

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Cells ◽

Filament Formation ◽

Access Memory

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Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c00515 ◽

2020 ◽

Vol 2 (10) ◽

pp. 3160-3170

Author(s):

Desmond J. J. Loy ◽

Putu A. Dananjaya ◽

Somsubhra Chakrabarti ◽

Kuan Hong Tan ◽

Samuel C. W. Chow ◽

...

Keyword(s):

Oxygen Vacancy ◽

Density Dependence ◽

Conduction Mechanism ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Switching Behavior ◽

Hopping Conduction ◽

Access Memory ◽

Vacancy Density

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First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

Chinese Physics B ◽

10.1088/1674-1056/23/12/127301 ◽

2014 ◽

Vol 23 (12) ◽

pp. 127301

Author(s):

Jing Zhao ◽

Jing-Yu Dong ◽

Shu-Xia Ren ◽

Li-Yong Zhang ◽

Xu Zhao ◽

...

Keyword(s):

Electronic Structure ◽

First Principles ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Conductive Filament ◽

First Principles Study

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Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

Scientific Reports ◽

10.1038/srep07764 ◽

2015 ◽

Vol 5 (1) ◽

Cited By ~ 78

Author(s):

Hangbing Lv ◽

Xiaoxin Xu ◽

Hongtao Liu ◽

Ruoyu Liu ◽

Qi Liu ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Conductive Filament ◽

Oxide Electrolyte

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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Microelectronic Engineering ◽

10.1016/j.mee.2013.02.076 ◽

2013 ◽

Vol 107 ◽

pp. 1-5 ◽

Cited By ~ 9

Author(s):

V. Maccaronio ◽

F. Crupi ◽

L.M. Procel ◽

L. Goux ◽

E. Simoen ◽

...

Keyword(s):

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

Access Memory ◽

Conductive Filament

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Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study

Acta Physica Sinica ◽

10.7498/aps.65.073101 ◽

2016 ◽

Vol 65 (7) ◽

pp. 073101

Author(s):

Dai Yue-Hua ◽

Pan Zhi-Yong ◽

Chen Zhen ◽

Wang Fei-Fei ◽

Li Ning ◽

...

Keyword(s):

First Principles ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Conductive Filament ◽

First Principles Study

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