Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

2020 ◽  
Vol 2 (10) ◽  
pp. 3160-3170
Author(s):  
Desmond J. J. Loy ◽  
Putu A. Dananjaya ◽  
Somsubhra Chakrabarti ◽  
Kuan Hong Tan ◽  
Samuel C. W. Chow ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Density Dependence ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Hopping Conduction ◽  
Access Memory ◽  
Vacancy Density

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

scholarly journals Surface effects of electrode-dependent switching behavior of resistive random-access memory

2016 ◽  
Vol 109 (13) ◽  
pp. 131603 ◽  
Author(s):  
Jr-Jian Ke ◽  
Tzu-Chiao Wei ◽  
Dung-Sheng Tsai ◽  
Chun-Ho Lin ◽  
Jr-Hau He
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Surface Effects ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory

Enhanced resistive switching behavior of CH3NH3PbI3 based resistive random access memory by nickel doping

Vacuum ◽  
2022 ◽  
pp. 110862
Author(s):  
Linwei Yan ◽  
Liuxia Ruan ◽  
Feifei Luo ◽  
Junwei Tong ◽  
Caixiang Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Nickel Doping

Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DJ08 ◽  
Author(s):  
Cheng-Li Lin ◽  
Wei-Yi Chang ◽  
Yen-Lun Huang ◽  
Pi-Chun Juan ◽  
Tse-Wen Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Capping Layer ◽  
Reduced Graphene

scholarly journals Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 7191-7198 ◽  
Author(s):  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Te-Kung Chiang ◽  
Yeong-Her Wang
Keyword(s):  
Strontium Titanate ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory

Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices

2015 ◽  
Vol 27 (40) ◽  
pp. 6170-6175 ◽  
Author(s):  
Eun Ji Yoo ◽  
Miaoqiang Lyu ◽  
Jung-Ho Yun ◽  
Chi Jung Kang ◽  
Young Jin Choi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Inorganic Hybrid

scholarly journals Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14662-14669
Author(s):  
Hongyan Zhang ◽  
Xiaofeng Zhao ◽  
Jiahe Huang ◽  
Ju Bai ◽  
Yanjun Hou ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Access Memory ◽  
Electrical Switching ◽  
Active Layers ◽  
Oxide Nanoparticle

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior.

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