Thermal Conductivity Reduction in a Silicon Thin Film with Nanocones

We present a closed-form classical model for the size dependence of thin film thermal conductivity. The model predictions are compared to Stillinger-Weber silicon thin film thermal conductivities (in-plane and cross-plane directions) calculated using phonon properties obtained from lattice dynamics calculations. By including the frequency dependence of the phonon-phonon relaxation times, the model is able to capture the approach to the bulk thermal conductivity better than models based on a single relaxation time.

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804 In-Plain Thermal Conductivity of Silicon Thin Film

The Proceedings of Conference of Kyushu Branch ◽

10.1299/jsmekyushu.2010.63.283 ◽

2010 ◽

Vol 2010.63 (0) ◽

pp. 283-284

Author(s):

Yoshihiko TSURU ◽

Harutoshi HAGINO ◽

Toru HIWADA ◽

Koji MIYAZAKI

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Silicon Thin Film

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Phonon transport characteristics across silicon thin film pair: Presence of a gap between the films

Journal of Non-Equilibrium Thermodynamics ◽

10.1515/jnet-2015-0006 ◽

2015 ◽

Vol 40 (3) ◽

Cited By ~ 3

Author(s):

Haider Ali ◽

Bekir S. Yilbas

Keyword(s):

Thin Film ◽

Experimental Data ◽

Thermal Conductivity ◽

Temperature Difference ◽

Radiation Heat Transfer ◽

Phonon Transport ◽

Radiative Energy ◽

Gap Size ◽

Boltzmann Transport ◽

Silicon Thin Film

AbstractPhonon transport across silicon thin film pair with minute gap (Casimir limit) between the films is studied. Phonon transport characteristics across the gap are examined for various gap sizes, and the transient solution of the frequency-dependent Boltzmann transport equation is presented according to relevant boundary conditions incorporating the gap between the film pair. Since the gap size is minute (Casimir limit), the radiative energy transport between the edges of the film pair is incorporated. In addition, phonon transmission and reflection is introduced at the gap edges, thus satisfying energy conservation. The thermal conductivity predicted is validated through experimental data reported in the open literature. Predicted thermal conductivity data agree well with the experimental data reported in the open literature. Increasing gap size alters the phonon transport characteristics across the film pair. Increasing gap size enhances temperature difference between the edges of the gap; in which case, the effect of phonon transmittance is more significant on the temperature difference than that corresponding to the radiation heat transfer due to Casimir limit.

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Phonon Transport in Silicon Thin Film: Effect of Temperature Oscillation on Effective Thermal Conductivity

Transport Theory and Statistical Physics ◽

10.1080/00411450.2014.886593 ◽

2013 ◽

Vol 42 (4-5) ◽

pp. 179-201 ◽

Cited By ~ 5

Author(s):

Saad Bin Mansoor ◽

Bekir Sami Yilbas

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Effective Thermal Conductivity ◽

Temperature Oscillation ◽

Phonon Transport ◽

Effect Of Temperature ◽

Silicon Thin Film

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Molecular Dynamics Simulation of Thermal Conductivity of Silicon Thin Film

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.maw200710 ◽

2007 ◽

Vol 48 (9) ◽

pp. 2419-2421 ◽

Cited By ~ 10

Author(s):

Haitao Wang ◽

Yibin Xu ◽

Masato Shimono ◽

Yoshihisa Tanaka ◽

Masayoshi Yamazaki

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Molecular Dynamics ◽

Molecular Dynamics Simulation ◽

Dynamics Simulation ◽

Silicon Thin Film

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Out-of-Plane Thermal Conductivity of Silicon Thin Film Doped with Germanium

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1082.459 ◽

2014 ◽

Vol 1082 ◽

pp. 459-462

Author(s):

Hui Chen ◽

Wei Yu Chen ◽

Yun Fei Chen ◽

Ke Dong Bi

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Film Thickness ◽

Dynamics Simulation ◽

Silicon Thin Film ◽

Doping Density ◽

Average Temperature ◽

Out Of Plane ◽

Non Equilibrium Molecular Dynamics ◽

Weber Potential

The out-of-plane thermal conductivity of silicon thin film doped with germanium is calculated by non-equilibrium molecular dynamics simulation using the Stillinger-Weber potential model. The silicon thin film is doped with germanium atoms in a random doping pattern with a doping density of 5% and 50% respectively. The effect of silicon thin film thickness on its thermal conductivity is investigated. The simulated thicknesses of silicon thin film doped with germanium range from 2.2 to 10.9 nm at an average temperature 300K. The simulation results indicate that the out-of-plane thermal conductivity of the silicon thin film doped with germanium decreases linearly with the decreasing film thickness. As for the film thickness of 9.8nm and the average temperature ranging from 250 to 1000 K, the investigation shows that the temperature dependence of the film thermal conductivity is not sensitive.

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Isotope and strain effects on thermal conductivity of silicon thin film

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2014.07.026 ◽

2014 ◽

Vol 64 ◽

pp. 204-210 ◽

Cited By ~ 3

Author(s):

Zhenyu Yang ◽

Rui Feng ◽

Fei Su ◽

Dayong Hu ◽

Xiaobing Ma

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Silicon Thin Film ◽

Strain Effects

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Silicon Thin-Film Lattice Dynamics and Thermal Transport Properties

Volume 7: Fluids and Heat Transfer, Parts A, B, C, and D ◽

10.1115/imece2012-89902 ◽

2012 ◽

Author(s):

Bruce L. Davis ◽

Mehmet Su ◽

Ihab El-Kady ◽

Mahmoud I. Hussein

Keyword(s):

Thin Film ◽

Thin Films ◽

Thermal Conductivity ◽

Transport Properties ◽

Lattice Dynamics ◽

Dielectric Materials ◽

Phonon Transport ◽

Solid State Physics ◽

Silicon Thin Film ◽

Silicon Thin Films

Thin films composed of dielectric materials are attracting growing interest in the solid state physics and nanoscale heat transfer communities. This is primarily due to their unique thermal and electronic properties and their extensive use as components in optoelectronic, and potentially in thermoelectric, devices. In this paper, an elaborate study is presented on silicon thin films ranging from a few nanometers in thickness to very thick bulk-like thicknesses. Full lattice dynamics calculations are performed incorporating the entire film cross section and the relaxation of the free surfaces. The phonon properties emerging from these calculations are then incorporated into Holland-Callaway models to predict the thermal conductivity and other phonon transport properties. A rigorous curve fitting process to a limited set of available experimental data is carried out to obtain the scattering lifetimes. Our results demonstrate the importance of proper consideration of the full thin-film dispersion description and provide insights into the relationship between thermal conductivity, film thickness and temperature.

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