Efficient Quasi-Two-Dimensional Perovskite Light-Emitting Diodes with Improved Multiple Quantum Well Structure

2019 ◽  
Vol 12 (1) ◽  
pp. 1721-1727 ◽  
Author(s):  
Wentao Bi ◽  
Qiuhong Cui ◽  
Pengcheng Jia ◽  
Xin Huang ◽  
Yangguang Zhong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Light Emitting ◽  
Quantum Well Structure

Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers

2013 ◽  
Vol 102 (24) ◽  
pp. 241108 ◽  
Author(s):  
Zhiyuan Zheng ◽  
Zimin Chen ◽  
Yingda Chen ◽  
Hualong Wu ◽  
Shanjin Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Efficiency Droop ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Light Emitting ◽  
Quantum Well Structure

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

2015 ◽  
Vol 24 (5) ◽  
pp. 056806 ◽  
Author(s):  
Yu-Kun Zhao ◽  
Yu-Feng Li ◽  
Ya-Ping Huang ◽  
Hong Wang ◽  
Xi-Lin Su ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Current Injection ◽  
Efficiency Droop ◽  
Multiple Quantum ◽  
High Current ◽  
Light Emitting ◽  
Quantum Well Structure

scholarly journals High efficiency blue phosphorescent organic light-emitting diodes with a multiple quantum well structure for reduced efficiency roll-off

2012 ◽  
Vol 20 (22) ◽  
pp. 24411 ◽  
Author(s):  
Xiao Yang ◽  
Shaoqing Zhuang ◽  
Xianfeng Qiao ◽  
Guangyuan Mu ◽  
Lei Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Organic Light Emitting Diodes ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Quantum Well Structure ◽  
Organic Light ◽  
Blue Phosphorescent

Effect of a multiple quantum well structure as an emissive layer based on blue phosphorescent organic light-emitting diodes

2013 ◽  
Vol 9 (6) ◽  
pp. 821-824 ◽  
Author(s):  
Seok Jae Lee ◽  
Ja Ryong Koo ◽  
Ho Won Lee ◽  
Dong Hyung Lee ◽  
Kum Hee Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Organic Light Emitting Diodes ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Emissive Layer ◽  
Quantum Well Structure ◽  
Organic Light ◽  
Blue Phosphorescent

High efficient white organic light-emitting diodes based on triplet multiple quantum well structure

2012 ◽  
Vol 101 (5) ◽  
pp. 053310 ◽  
Author(s):  
Bo Zhao ◽  
Zisheng Su ◽  
Wenlian Li ◽  
Bei Chu ◽  
Fangming Jin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Organic Light Emitting Diodes ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Quantum Well Structure ◽  
Organic Light ◽  
High Efficient

scholarly journals The influence of type-I and type-II triplet multiple quantum well structure on white organic light-emitting diodes

2013 ◽  
Vol 8 (1) ◽  
pp. 529 ◽  
Author(s):  
Bo Zhao ◽  
Zisheng Su ◽  
Wenlian Li ◽  
Bei Chu ◽  
Fangming Jin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Organic Light Emitting Diodes ◽  
Multiple Quantum ◽  
Type I ◽  
Type Ii ◽  
Light Emitting ◽  
Quantum Well Structure ◽  
Organic Light

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer

InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

2003 ◽  
Vol 0 (7) ◽  
pp. 2257-2260 ◽  
Author(s):  
Chin-Hsiang Chen ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su
Keyword(s):  
Quantum Well ◽  
White Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Dual Wavelength ◽  
Multiple Quantum ◽  
Light Emitting ◽  
White Light Emitting Diodes
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